We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFP4N05L DISTI # RFP4N05L | ON Semiconductor | - Bulk (Alt: RFP4N05L) Min Qty: 1 Container: Bulk | Americas - 0 | |
| RFP4N05 | Harris Semiconductor | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 6728 |
|
| RFP4N05L | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-220AB | 194 |
|
| RFP4N05L | Harris Semiconductor | 243 |
| |
| RFP4N05L | Intersil Corporation | 41 | ||
| RFP4N05 | HARTING Technology Group | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 4641 | |
| RFP4N05L | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 27437 | |
| RFP4N05LP2158 | HARTING Technology Group | RoHS: Not Compliant | 812 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFPA5218TR13 OMO.#: OMO-RFPA5218TR13 |
RF Amplifier 2.4-2.5GHz FEM |
|
Mfr.#: RFP-100-30AE OMO.#: OMO-RFP-100-30AE-1190 |
ATTENUATOR - PCB MOUNT |
|
|
Mfr.#: RFP12P10H1 OMO.#: OMO-RFP12P10H1-1190 |
Neu und Original |
|
|
Mfr.#: RFP20-50TPC OMO.#: OMO-RFP20-50TPC-1190 |
Neu und Original |
|
|
Mfr.#: RFP25N05+L OMO.#: OMO-RFP25N05-L-1190 |
Power Field-Effect Transistor, 25A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: RFP2P10 OMO.#: OMO-RFP2P10-1190 |
Power Field-Effect Transistor, 2A I(D), 100V, 3.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: RFP30N06E OMO.#: OMO-RFP30N06E-1190 |
Neu und Original |
|
|
Mfr.#: RFP4N35 OMO.#: OMO-RFP4N35-1190 |
Power Field-Effect Transistor, 4A I(D), 350V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
|
Mfr.#: RFPCA201018IM5B301 |
RF ANT 5.5GHZ PCB TRACE IPEX MAL |
|
|
Mfr.#: RFPP3180 OMO.#: OMO-RFPP3180-1152 |
RF Amplifier 45-1218MHz Hybrid Push/ Pull Amp. |
