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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFW820BTM DISTI # 512-IRFW820BTM | ON Semiconductor | MOSFET 500V N-Channel B-FET RoHS: Compliant | 0 | |
| IRFW820BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1574 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRFW820A OMO.#: OMO-IRFW820A-1190 |
Neu und Original |
|
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Mfr.#: IRFW820ATM OMO.#: OMO-IRFW820ATM-1190 |
Neu und Original |
|
|
Mfr.#: IRFW820BTM OMO.#: OMO-IRFW820BTM-1190 |
MOSFET 500V N-Channel B-FET |
|
|
Mfr.#: IRFW830B OMO.#: OMO-IRFW830B-1190 |
Neu und Original |
|
|
Mfr.#: IRFW830TM OMO.#: OMO-IRFW830TM-1190 |
Neu und Original |
|
|
Mfr.#: IRFW840A OMO.#: OMO-IRFW840A-1190 |
Neu und Original |
|
|
Mfr.#: IRFW840ATM OMO.#: OMO-IRFW840ATM-1190 |
Neu und Original |
|
|
Mfr.#: IRFW840BTM OMO.#: OMO-IRFW840BTM-1190 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IRFW840BTM(WS) OMO.#: OMO-IRFW840BTM-WS--1190 |
Neu und Original |
|
|
Mfr.#: IRFW840TM OMO.#: OMO-IRFW840TM-1190 |
Neu und Original |
