NSBA114EDXV6T1G

NSBA114EDXV6T1G
Mfr. #:
NSBA114EDXV6T1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSBA114EDXV6T1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA114EDXV6T1G DatasheetNSBA114EDXV6T1G Datasheet (P4-P6)NSBA114EDXV6T1G Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Dual
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
10 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
DC-Kollektor/Basisverstärkung hfe Min:
35
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
- 0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
357 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
NSBA114EDXV6
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
35
Höhe:
0.55 mm
Länge:
1.6 mm
Breite:
1.2 mm
Marke:
ON Semiconductor
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
4000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
NSBA114EDX, NSBA114ED, NSBA114E, NSBA114, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***ical
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***emi
Dual PNP Bipolar Digital Transistor (BRT)
***ure Electronics
NSBA114EDXV6 Series 50 V 100 mA Dual PNP Bias Resistor Transistor - SOT-563
***ponent Stockers
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 10K/10Kohm, Sot-563; Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
NSBA114EDXV6T1G
DISTI # V36:1790_07305002
ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
RoHS: Compliant
12000
  • 100000:$0.0446
  • 48000:$0.0470
  • 24000:$0.0531
  • 8000:$0.0574
  • 4000:$0.0646
NSBA114EDXV6T1G
DISTI # NSBA114EDXV6T1GOSTR-ND
ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.0790
NSBA114EDXV6T1G
DISTI # 31154063
ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
RoHS: Compliant
12000
  • 8000:$0.0574
  • 4000:$0.0646
NSBA114EDXV6T1G
DISTI # 25632810
ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
RoHS: Compliant
12000
  • 48000:$0.0478
  • 24000:$0.0485
  • 12000:$0.0519
NSBA114EDXV6T1G
DISTI # NSBA114EDXV6T1G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA114EDXV6T1G)
RoHS: Compliant
Min Qty: 12000
Container: Reel
Americas - 0
  • 12000:$0.0491
  • 20000:$0.0488
  • 32000:$0.0482
  • 60000:$0.0476
  • 120000:$0.0464
NSBA114EDXV6T1G
DISTI # 49X8911
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT-563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
  • 1:$0.4820
  • 10:$0.2750
  • 100:$0.1210
  • 1000:$0.0940
NSBA114EDXV6T1G
DISTI # 42K2295
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT-563, FULL REEL,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
  • 1:$0.4740
  • 50:$0.2680
  • 100:$0.1170
  • 250:$0.1130
  • 500:$0.1100
  • 1000:$0.0650
  • 12000:$0.0630
  • 24000:$0.0600
NSBA114EDXV6T1G
DISTI # 863-NSBA114EDXV6T1G
ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
RoHS: Compliant
0
  • 1:$0.4200
  • 10:$0.2720
  • 100:$0.1170
  • 1000:$0.0900
  • 4000:$0.0680
  • 8000:$0.0610
  • 24000:$0.0570
NSBA114EDXV6T1GON Semiconductor 
RoHS: Not Compliant
159250
  • 1000:$0.0500
  • 25:$0.0600
  • 100:$0.0600
  • 500:$0.0600
  • 1:$0.0700
NSBA114EDXV6T1GON Semiconductor100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR500
    NSBA114EDXV6T1G
    DISTI # C1S541900477447
    ON SemiconductorTrans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
    RoHS: Compliant
    12000
    • 8000:$0.0574
    • 4000:$0.0646
    Bild Teil # Beschreibung
    NSBA114YF3T5G

    Mfr.#: NSBA114YF3T5G

    OMO.#: OMO-NSBA114YF3T5G

    Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
    NSBA114EDP6T5G

    Mfr.#: NSBA114EDP6T5G

    OMO.#: OMO-NSBA114EDP6T5G

    Bipolar Transistors - Pre-Biased SOT-963 DUAL PBRT
    NSBA114EDXV6T1G

    Mfr.#: NSBA114EDXV6T1G

    OMO.#: OMO-NSBA114EDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114EDXV6T5

    Mfr.#: NSBA114EDXV6T5

    OMO.#: OMO-NSBA114EDXV6T5

    Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114EDXV6T1

    Mfr.#: NSBA114EDXV6T1

    OMO.#: OMO-NSBA114EDXV6T1-1190

    Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114TDXV6T5

    Mfr.#: NSBA114TDXV6T5

    OMO.#: OMO-NSBA114TDXV6T5-ON-SEMICONDUCTOR

    TRANS 2PNP PREBIAS 0.5W SOT563
    NSBA114TDXV6T5G

    Mfr.#: NSBA114TDXV6T5G

    OMO.#: OMO-NSBA114TDXV6T5G-1190

    TRANS PREBIAS DUAL PNP SOT563
    NSBA114EDP6T5G

    Mfr.#: NSBA114EDP6T5G

    OMO.#: OMO-NSBA114EDP6T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SOT-963 DUAL PBRT
    NSBA114YDP6T5G

    Mfr.#: NSBA114YDP6T5G

    OMO.#: OMO-NSBA114YDP6T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SOT-963 DUAL PBRT
    NSBA114YF3T5G

    Mfr.#: NSBA114YF3T5G

    OMO.#: OMO-NSBA114YF3T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von NSBA114EDXV6T1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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