RGT40NS65DGC9

RGT40NS65DGC9
Mfr. #:
RGT40NS65DGC9
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGT40NS65DGC9 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RGT40NS65DGC9 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-262-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.65 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Pd - Verlustleistung:
161 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
ROHM Halbleiter
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
IGBTs
Teil # Aliase:
RGT40NS65D(TO-262)
Tags
RGT40N, RGT4, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
***ical
Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 40A 161000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 40A, 175Deg C, 161W; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, 175DEG C, 161W; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 40A, 175°C, 161W; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:161W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Teil # Mfg. Beschreibung Aktie Preis
RGT40NS65DGC9
DISTI # RGT40NS65DGC9-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 3000:$1.3734
  • 1000:$1.4224
  • 100:$2.0895
  • 25:$2.4524
  • 10:$2.6000
  • 1:$2.8900
RGT40NS65DGC9
DISTI # 755-RGT40NS65DGC9
ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
1000
  • 1:$2.8800
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
RGT40NS65DGC9ROHM Semiconductor 40
  • 33:$2.1600
  • 10:$2.3760
  • 1:$3.2400
RGT40NS65DGC9ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
Americas -
    RGT40NS65DGC9ROHM SemiconductorRoHS(ship within 1day)50
    • 1:$3.0000
    • 10:$2.2500
    • 50:$1.5000
    • 100:$1.2000
    • 500:$1.1200
    • 1000:$1.0800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W
    RoHS: Compliant
    0
    • 1000:$1.8000
    • 500:$2.1100
    • 250:$2.2700
    • 100:$2.3900
    • 10:$2.7900
    • 1:$3.6800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W0
    • 500:£1.2100
    • 250:£1.3000
    • 100:£1.3700
    • 10:£1.6000
    • 1:£2.1100
    Bild Teil # Beschreibung
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL

    IGBT Transistors 650V 20A IGBT Stop Trench
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL

    IGBT Transistors FIELD STOP TRENCH IGBT
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL-ROHM-SEMI

    IGBT Transistors 650V 20A Field Stop Trench IGBT
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL-1190

    FIELD STOP TRENCH IGBT
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9-1190

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von RGT40NS65DGC9 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,88 $
    2,88 $
    10
    2,45 $
    24,50 $
    100
    1,96 $
    196,00 $
    500
    1,71 $
    855,00 $
    1000
    1,42 $
    1 420,00 $
    2500
    1,32 $
    3 300,00 $
    5000
    1,27 $
    6 350,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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