GS881E18CD-200V

GS881E18CD-200V
Mfr. #:
GS881E18CD-200V
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8/2.5V 512K x 18 9M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS881E18CD-200V Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS881E18CD-200V Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
Speichergröße:
9 Mbit
Organisation:
512 k x 18
Zugriffszeit:
6.5 ns
Maximale Taktfrequenz:
200 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
2.7 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
115 mA, 140 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
SDR
Serie:
GS881E18CD
Typ:
DCD
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
66
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SyncBurst
Tags
GS881E18CD-20, GS881E18CD-2, GS881E18CD, GS881E1, GS881E, GS881, GS88, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 9M-Bit 512K x 18 6.5ns/3ns 165-Pin FBGA Tray
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Bild Teil # Beschreibung
GS881E18CD-200

Mfr.#: GS881E18CD-200

OMO.#: OMO-GS881E18CD-200

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-150V

Mfr.#: GS881E18CGT-150V

OMO.#: OMO-GS881E18CGT-150V

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CD-150

Mfr.#: GS881E18CD-150

OMO.#: OMO-GS881E18CD-150

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-150

Mfr.#: GS881E18CGT-150

OMO.#: OMO-GS881E18CGT-150

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGD-250

Mfr.#: GS881E18CGD-250

OMO.#: OMO-GS881E18CGD-250

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGD-250V

Mfr.#: GS881E18CGD-250V

OMO.#: OMO-GS881E18CGD-250V

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CD-333I

Mfr.#: GS881E18CD-333I

OMO.#: OMO-GS881E18CD-333I

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-200IV

Mfr.#: GS881E18CGT-200IV

OMO.#: OMO-GS881E18CGT-200IV

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CD-200IV

Mfr.#: GS881E18CD-200IV

OMO.#: OMO-GS881E18CD-200IV

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CGD-200IV

Mfr.#: GS881E18CGD-200IV

OMO.#: OMO-GS881E18CGD-200IV

SRAM 1.8/2.5V 512K x 18 9M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von GS881E18CD-200V dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
66
16,21 $
1 069,86 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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