AIGW50N65F5XKSA1

AIGW50N65F5XKSA1
Mfr. #:
AIGW50N65F5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors DISCRETES
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AIGW50N65F5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AIGW50N65F5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.66 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
270 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
TRENCHSTOP 5 F5
Verpackung:
Rohr
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
AIGW50N65F5 SP001346882
Gewichtseinheit:
0.211644 oz
Tags
AIGW5, AIGW, AIG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes
***ineon SCT
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***nell
IGBT, AEC-Q101, 650V, 80A, 270W, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP 5 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
Teil # Mfg. Beschreibung Aktie Preis
AIGW50N65F5XKSA1
DISTI # AIGW50N65F5XKSA1-ND
Infineon Technologies AGIGBT 650V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
105In Stock
  • 2640:$3.6189
  • 720:$4.2069
  • 240:$4.8312
  • 25:$5.5640
  • 10:$5.8350
  • 1:$6.4600
AIGW50N65F5XKSA1
DISTI # AIGW50N65F5XKSA1
Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW50N65F5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$3.1900
  • 1440:$3.2900
  • 960:$3.3900
  • 480:$3.4900
  • 240:$3.6900
AIGW50N65F5XKSA1
DISTI # SP001346882
Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V (Alt: SP001346882)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.9900
  • 500:€3.0900
  • 100:€3.1900
  • 50:€3.2900
  • 25:€3.3900
  • 10:€3.6900
  • 1:€4.5900
AIGW50N65F5XKSA1
DISTI # 93AC6942
Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247 ROHS COMPLIANT: YES224
  • 500:$4.0400
  • 250:$4.4300
  • 100:$4.6500
  • 50:$5.0000
  • 25:$5.3500
  • 10:$5.6100
  • 1:$6.2000
AIGW50N65F5XKSA1
DISTI # 726-AIGW50N65F5XKSA1
Infineon Technologies AGIGBT Transistors DISCRETES
RoHS: Compliant
620
  • 1:$6.1400
  • 10:$5.5500
  • 25:$5.3000
  • 100:$4.6000
  • 250:$4.3900
  • 500:$4.0000
AIGW50N65F5XKSA1
DISTI # 2986330
Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247
RoHS: Compliant
224
  • 1000:$5.2800
  • 500:$5.7700
  • 250:$6.3700
  • 100:$6.6900
  • 10:$7.6400
  • 1:$9.7700
AIGW50N65F5XKSA1
DISTI # 2986330
Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247224
  • 500:£2.9000
  • 250:£3.1800
  • 100:£3.3300
  • 10:£3.8500
  • 1:£4.9000
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SZ1SMB5929BT3G

Mfr.#: SZ1SMB5929BT3G

OMO.#: OMO-SZ1SMB5929BT3G

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SC189ASKTRT

Mfr.#: SC189ASKTRT

OMO.#: OMO-SC189ASKTRT

Switching Voltage Regulators SC189ASKTRT--Tape and Reel
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Mfr.#: STW48N60DM2

OMO.#: OMO-STW48N60DM2

MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
CR201-75VE

Mfr.#: CR201-75VE

OMO.#: OMO-CR201-75VE

Heat Sinks Aluminum heatsink 75mmdegreased
TLIN2029DRBRQ1

Mfr.#: TLIN2029DRBRQ1

OMO.#: OMO-TLIN2029DRBRQ1

LIN Transceivers Fault Protected Local Interconnect Network (LIN) Transceiver With Dominant State Timeout 8-SON -40 to 125
TPS3851H33EDRBT

Mfr.#: TPS3851H33EDRBT

OMO.#: OMO-TPS3851H33EDRBT-TEXAS-INSTRUMENTS

Processor Supervisor 1 Active Low/Open Drain 8-Pin VSON EP T/R
SZ1SMB5929BT3G

Mfr.#: SZ1SMB5929BT3G

OMO.#: OMO-SZ1SMB5929BT3G-ON-SEMICONDUCTOR

Zener Diodes ZEN SMB REG 3W
SC189ASKTRT

Mfr.#: SC189ASKTRT

OMO.#: OMO-SC189ASKTRT-SEMTECH

IC REG BUCK 1V 1.5A SOT23-5
Verfügbarkeit
Aktie:
620
Auf Bestellung:
2603
Menge eingeben:
Der aktuelle Preis von AIGW50N65F5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,14 $
6,14 $
10
5,55 $
55,50 $
25
5,30 $
132,50 $
100
4,60 $
460,00 $
250
4,39 $
1 097,50 $
500
4,00 $
2 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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