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FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJBE2150DTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
D2PAK-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
800 V
Kollektor- Basisspannung VCBO:
1.25 kV
Emitter- Basisspannung VEBO:
12 V
Kollektor-Emitter-Sättigungsspannung:
0.25 V
Maximaler DC-Kollektorstrom:
2 A
Bandbreitenprodukt fT gewinnen:
5 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
FJBE2150D
DC-Stromverstärkung hFE Max:
35
Verpackung:
Rohr
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
0.5 A
DC-Kollektor/Basisverstärkung hfe Min:
20
Pd - Verlustleistung:
110 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.066315 oz
Tags
FJB
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
***ical
Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
Teil # Mfg. Beschreibung Aktie Preis
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      Bild Teil # Beschreibung
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von FJBE2150DTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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