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NTMD5838NLR2G

NTMD5838NLR2G
Mfr. #:
NTMD5838NLR2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET NFETDPAK40V100A3.7M OHM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMD5838NLR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMD5838NLR2G DatasheetNTMD5838NLR2G Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
8.9 A
Rds On - Drain-Source-Widerstand:
20 mOhms, 20 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
17 nC, 17 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
NTMD5838NL
Transistortyp:
2 N-Channel
Marke:
ON Semiconductor
Vorwärtstranskonduktanz - Min:
4 S, 4 S
Abfallzeit:
4 ns, 4 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns, 23 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns, 17 ns
Typische Einschaltverzögerungszeit:
11 ns, 11 ns
Gewichtseinheit:
0.019048 oz
Tags
NTMD, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
NTMD5838NLR2G Dual N-channel MOSFET Transistor; 8.9 A; 40 V; 8-Pin SOIC
***ure Electronics
Dual N-Channel 40 V 25 mOhm 2.1 W Surface Mount Power MOSFET - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 40V 8.9A 8-Pin SOIC T/R
***emi
Power MOSFET 40V 8.9A 20 mOhm Dual N-Channel SO-8 Logic Level
***ark
Mosfet, Dual N-Ch, 40V, 7.4A, Soic-8; Channel Type:n Channel; Drain Source Voltage Vds N Channel:40V; Drain Source Voltage Vds P Channel:40V; Continuous Drain Current Id N Channel:7.4A; Continuous Drain Current Id P Channel:7.4A Rohs Compliant: Yes
***ure Electronics
N-Channel 30 V 23 mOhm 13 nC Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ
***et Europe
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R
***enic
30V 8.5A 23m´Î@10V8.5A 2.5W 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N, SO-8; Transistor Polarity:N; Current Id Max:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SO; No. of Pins:8; SVHC:No SVHC (18-Jun-2010); Continuous Drain Current, Id:8.5A; Package / Case:SO-8 (SOIC-8); Termination Type:SMD; Threshold Voltage Vgs Typ:1.7V; Transistor Type:PowerTrench; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
N-Channel 40 V 29 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET, 40V, 7.6A, 29mΩ
***et Europe
Trans MOSFET N-CH 40V 7.6A 8-Pin SOIC N T/R
***rchild Semiconductor
These N-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
***ure Electronics
N-Channel 30 V 22 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SMD, 8-SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 8.4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.9V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
NTMD5838NLR2G
DISTI # V72:2272_07297374		ON SemiconductorTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		1
  • 1:$0.6611
NTMD5838NLR2G
DISTI # V36:1790_07297374		ON SemiconductorTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 5000:$0.2504
NTMD5838NLR2G
DISTI # NTMD5838NLR2GOSTR-ND		ON SemiconductorMOSFET 2N-CH 40V 7.4A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 25000:$0.2141
  • 12500:$0.2198
  • 5000:$0.2282
  • 2500:$0.2451
NTMD5838NLR2G
DISTI # NTMD5838NLR2GOSCT-ND		ON SemiconductorMOSFET 2N-CH 40V 7.4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2786
  • 500:$0.3482
  • 100:$0.4405
  • 10:$0.5750
  • 1:$0.6500
NTMD5838NLR2G
DISTI # NTMD5838NLR2GOSDKR-ND		ON SemiconductorMOSFET 2N-CH 40V 7.4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2786
  • 500:$0.3482
  • 100:$0.4405
  • 10:$0.5750
  • 1:$0.6500
NTMD5838NLR2G
DISTI # NTMD5838NLR2G		ON SemiconductorTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: NTMD5838NLR2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.1599
  • 15000:€0.1719
  • 10000:€0.1859
  • 5000:€0.2029
  • 2500:€0.2479
NTMD5838NLR2G
DISTI # NTMD5838NLR2G		ON SemiconductorTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: NTMD5838NLR2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.2295
  • 62500:$0.2333
  • 25000:$0.2414
  • 12500:$0.2500
  • 7500:$0.2593
  • 5000:$0.2692
  • 2500:$0.2800
NTMD5838NLR2G
DISTI # NTMD5838NLR2G		ON SemiconductorTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMD5838NLR2G)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.2649
  • 25000:$0.2719
  • 15000:$0.2749
  • 10000:$0.2789
  • 5000:$0.2809
NTMD5838NLR2G
DISTI # 81Y7050		ON SemiconductorMOSFET, DUAL N-CH, 40V, 7.4A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7.4A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0162ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,RoHS Compliant: Yes0
  • 1000:$0.2610
  • 500:$0.2820
  • 250:$0.3040
  • 100:$0.3250
  • 50:$0.3850
  • 25:$0.4450
  • 10:$0.5050
  • 1:$0.6160
NTMD5838NLR2G
DISTI # 52T8330		ON SemiconductorNFET SO8 40V 8.9A 25MOHM / REEL0
  • 15000:$0.2240
  • 5000:$0.2310
  • 1000:$0.2470
  • 500:$0.3450
  • 250:$0.3560
  • 100:$0.3680
  • 25:$0.5770
  • 1:$0.7830
NTMD5838NLR2G
DISTI # 863-NTMD5838NLR2G		ON SemiconductorMOSFET NFETDPAK40V100A3.7M OHM
RoHS: Compliant		414
  • 1:$0.6100
  • 10:$0.5000
  • 100:$0.3220
  • 1000:$0.2580
  • 2500:$0.2180
  • 10000:$0.2100
  • 25000:$0.2020
NTMD5838NLR2G
DISTI # 8021064P		ON SemiconductorON SEMI MOSFETNTMD5838NLR2G, RL250
  • 1000:£0.2220
  • 500:£0.2400
  • 125:£0.2890
  • 50:£0.3330
NTMD5838NLR2G
DISTI # 2533196		ON SemiconductorMOSFET, DUAL N-CH, 40V, 7.4A, SOIC-80
  • 1000:£0.1870
  • 500:£0.2110
  • 100:£0.2340
  • 50:£0.3630
  • 5:£0.4100
NTMD5838NLR2G
DISTI # 2985428		ON SemiconductorMOSFET, DUAL N-CH, 40V, 7.4A, SOIC-8
RoHS: Compliant		0
  • 10000:$0.3160
  • 2500:$0.3290
NTMD5838NLR2G
DISTI # 2533196		ON SemiconductorMOSFET, DUAL N-CH, 40V, 7.4A, SOIC-8
RoHS: Compliant		0
  • 10000:$0.3160
  • 2500:$0.3290
  • 1000:$0.3890
  • 100:$0.4850
  • 10:$0.7540
  • 1:$0.9190
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von NTMD5838NLR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,61 $
0,61 $
10
0,50 $
5,00 $
100
0,32 $
32,20 $
1000
0,26 $
258,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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