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STW15NM60ND

STW15NM60ND
Mfr. #:
STW15NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V FDMesh
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STW15NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STW15NM60ND Mehr Informationen STW15NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
299 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
FDmesh
Verpackung:
Rohr
Höhe:
20.15 mm
Länge:
15.75 mm
Serie:
STW15NM60ND
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
STMicroelectronics
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
17 ns
Gewichtseinheit:
1.340411 oz
Tags
STW15NM60N, STW15NM, STW15N, STW15, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-247 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 14A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
STW15NM60ND
DISTI # 497-8452-5-ND		STMicroelectronicsMOSFET N-CH 600V 14A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		391In Stock
  • 120:$5.1078
  • 30:$5.6600
  • 1:$6.9000
STW15NM60ND
DISTI # 511-STW15NM60ND		STMicroelectronicsMOSFET N-channel 600 V FDMesh
RoHS: Compliant		0
    STW15NM60NDST Microwave CorporationPower Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    RoHS: Compliant    		Europe - 540
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von STW15NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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