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STW18NM60ND

STW18NM60ND
Mfr. #:
STW18NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 600V 13A TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STW18NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STW18NM60ND Mehr Informationen STW18NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller
ST
Produktkategorie
FETs - Einzeln
Serie
N-Kanal-MDmesh
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
130 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
18 ns
Anstiegszeit
15.5 ns
Vgs-Gate-Source-Spannung
25 V
ID-Dauer-Drain-Strom
13 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Widerstand
290 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
13 ns
Typische-Einschaltverzögerungszeit
55 ns
Qg-Gate-Ladung
34 nC
Tags
STW18NM6, STW18NM, STW18, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
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***et
Trans MOSFET N-CH 600V 13A 3-Pin TO-247 Tube
***(Formerly Allied Electronics)
Power MOSFET Nchannel MDmesh II 600V 13A
*** Electronic Components
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N-channel 600V - 0.27Ohm - 13A - D2/I2PAK - TO-220/FP - TO-247
***r Electronics
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
***ark
MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
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N-Channel 600 V 0.28 O 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3
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***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
***(Formerly Allied Electronics)
IRFP17N50LPBF N-channel MOSFET Transistor; 16 A; 500 V; 3-Pin TO-247AC
***ure Electronics
IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC
***nell
MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
STW18NM60ND
DISTI # 497-13887-5-ND		STMicroelectronicsMOSFET N-CH 600V 13A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		254In Stock
  • 120:$5.1345
  • 30:$5.5967
  • 1:$6.8700
STW18NM60NDSTMicroelectronicsN-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
RoHS: Compliant		300Tube
  • 600:$3.0000
STW18NM60ND
DISTI # 511-STW18NM60ND		STMicroelectronicsMOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
RoHS: Compliant		0
    STW18NM60NDSTMicroelectronicsAVAILABLE1899
      STW18NM60ND
      DISTI # XSFP00000145774      		STMicroelectronics 
      RoHS: Compliant      		202
      • 34:$6.0000
      • 202:$5.4500
      Bild Teil # Beschreibung
      STW18N60DM2

      Mfr.#: STW18N60DM2

      OMO.#: OMO-STW18N60DM2

      		 MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
      STW18N60M2

      Mfr.#: STW18N60M2

      OMO.#: OMO-STW18N60M2

      		 MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
      STW18NM60N

      Mfr.#: STW18NM60N

      OMO.#: OMO-STW18NM60N

      		 MOSFET N-channel 600 V 0.27ohms 13A Mdmesh
      STW18N65M5

      Mfr.#: STW18N65M5

      OMO.#: OMO-STW18N65M5

      		 MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
      STW18NK60Z

      Mfr.#: STW18NK60Z

      OMO.#: OMO-STW18NK60Z

      		 MOSFET N-Ch 600 Volt 16 Amp
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      Mfr.#: STW18N60M2

      OMO.#: OMO-STW18N60M2-STMICROELECTRONICS

      		 IGBT Transistors MOSFET POWER MOSFET
      STW18NM60N

      Mfr.#: STW18NM60N

      OMO.#: OMO-STW18NM60N-STMICROELECTRONICS

      		 MOSFET N-CH 600V 13A TO-247
      STW18N65M5

      Mfr.#: STW18N65M5

      OMO.#: OMO-STW18N65M5-STMICROELECTRONICS

      		 MOSFET N CH 650V 15A TO-247
      STW18NM60N,W18NM60N

      Mfr.#: STW18NM60N,W18NM60N

      OMO.#: OMO-STW18NM60N-W18NM60N-1190

      		 Neu und Original
      STW18NM80,18NM80

      Mfr.#: STW18NM80,18NM80

      OMO.#: OMO-STW18NM80-18NM80-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von STW18NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,50 $
      4,50 $
      10
      4,28 $
      42,75 $
      100
      4,05 $
      405,00 $
      500
      3,82 $
      1 912,50 $
      1000
      3,60 $
      3 600,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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