MRFE6S9045NR1

Mfr. #:: MRFE6S9045NR1
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors HV6E 45W NI270-2 FET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRFE6S9045NR1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: E

Polarität des Transistors:: N-Kanal

Technologie:: Si

Vds - Drain-Source-Durchbruchspannung:: 66 V

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: TO-270

Verpackung:: Spule

Aufbau:: Single

Höhe:: 2.08 mm

Länge:: 9.7 mm

Serie:: MRFE6S9045NR1

Typ:: HF-Leistungs-MOSFET

Breite:: 6.15 mm

Marke:: NXP / Freescale

Kanalmodus:: Erweiterung

Feuchtigkeitsempfindlich:: ja

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 500

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: - 0.5 V, 12 V

Teil # Aliase:: 935316813528

Gewichtseinheit:: 0.018679 oz

Tags: MRFE6S9045, MRFE6S904, MRFE6S90, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6S9045NR1 Bewertungen und Rezensionen

H***d

good

2019-06-10

F***n

Trés bien!

2019-04-18

P***E

Perfect

2019-05-06

MRFE6S9045NR1 Beschreibung

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V

***W: RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***icontronic: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270

***ment14 APAC: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V

***W: RF Power Transistor,470 to 960 MHz, 60 W, Typ Gain in dB is 21.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***nsix Microsemi: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F

***ment14 APAC: RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel

***ark: RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes

***W: RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731

*** Semiconductors SCT: GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2

***et: Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R

***ure Electronics: MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2

***p One Stop Global: Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R

***nsix Microsemi: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA

***i-Key: MOSFET RF N-CH 28V 10W TO2702 GW

*** Electronic Components: RF MOSFET Transistors HV6 2GHZ 10W

***or: RF MOSFET LDMOS 28V TO270-2 GULL

***ment14 APAC: RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G

***i-Key Marketplace: RF S BAND, N-CHANNEL POWER MOSFE

***nell: RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of

***W: RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1732

*** Semiconductors SCT: GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, ,

***et: Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270 T/R

***icontronic: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA

***ponent Stockers USA: S BAND Si N-CHANNEL RF POWER MOSFET TO-270AA

*** Electronic Components: RF MOSFET Transistors HV6 2GHZ 10W TO270-2

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V

***et: Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R

*** Electronic Components: RF MOSFET Transistors HV6 2.7GHZ 15W

***S: French Electronic Distributor since 1988

***i-Key Marketplace: RF S BAND, N-CHANNEL , TO-270AA

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRFE6S9045NR1 DISTI # V72:2272_07204216	NXP Semiconductors	Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R RoHS: Compliant	55	25:$24.0700 10:$27.1300 1:$29.5800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1CT-ND	NXP Semiconductors	FET RF 66V 880MHZ TO-270-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	721In Stock	100:$23.9244 10:$28.0170 1:$30.3800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1DKR-ND	NXP Semiconductors	FET RF 66V 880MHZ TO-270-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	721In Stock	100:$23.9244 10:$28.0170 1:$30.3800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1TR-ND	NXP Semiconductors	FET RF 66V 880MHZ TO-270-2 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call	500:$21.0882
MRFE6S9045NR1 DISTI # 25767380	NXP Semiconductors	Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R RoHS: Compliant	55	25:$24.0700 10:$27.1300 1:$29.5800
MRFE6S9045NR1 DISTI # MRFE6S9045NR1	Avnet, Inc.	Trans MOSFET N-CH 66V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6S9045NR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$22.1900 1000:$21.3900 2000:$20.4900 3000:$19.7900 5000:$19.3900
MRFE6S9045NR1 DISTI # MRFE6S9045NR1	Avnet, Inc.	Trans MOSFET N-CH 66V 3-Pin TO-270 T/R (Alt: MRFE6S9045NR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Asia - 0	500:$21.8304 1000:$21.2240 1500:$20.6504 2500:$20.1070 5000:$19.8458 12500:$19.5914 25000:$19.1016
MRFE6S9045NR1 DISTI # 31AC6668	NXP Semiconductors	TRANSISTOR, RF, 66V, TO-270-2,Drain Source Voltage Vds:66VDC,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:865MHz,Operating Frequency Max:960MHz,RF Transistor Case:TO-270,No. of Pins:2Pins,RoHS Compliant: Yes	345	1:$30.3800 10:$28.0200 25:$24.4500 50:$24.1900 100:$23.9300 250:$22.9300
MRFE6S9045NR1 DISTI # 54M7235	NXP Semiconductors	RF MOSFET, N CHANNEL, 66V, TO-270,Drain Source Voltage Vds:66V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:920MHz,Operating Frequency Max:960MHz,RF Transistor Case:TO-270,No. of Pins:2Pins RoHS Compliant: Yes	0	1:$30.5700
MRFE6S9045NR1 DISTI # 841-MRFE6S9045NR1	NXP Semiconductors	RF MOSFET Transistors HV6E 45W NI270-2 FET RoHS: Compliant	509	1:$30.3800 5:$29.0400 10:$28.0200 25:$24.4500 100:$23.9300 250:$22.9300 500:$21.0900
MRFE6S9045NR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 RoHS: Compliant	267	1000:$20.1100 500:$21.1600 100:$22.0300 25:$22.9800 1:$24.7500
MRFE6S9045NR1 DISTI # MRFE6S9045NR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	1:$33.1600 10:$29.9800 25:$28.3400
MRFE6S9045NR1 DISTI # 2776257	NXP Semiconductors	TRANSISTOR, RF, 66V, TO-270-2 RoHS: Compliant	345	1:$46.0400 5:$44.1200 10:$40.7300 50:$38.5100 100:$36.5200
MRFE6S9045NR1 DISTI # C1S233100192207	NXP Semiconductors	Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R RoHS: Compliant	55	25:$24.0600 10:$27.1300 1:$29.5900
MRFE6S9045NR1 DISTI # 2776257	NXP Semiconductors	TRANSISTOR, RF, 66V, TO-270-2 RoHS: Compliant	345	1:£23.2100 5:£22.1900 10:£18.6700 50:£18.1000 100:£17.5200

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Verfügbarkeit

Aktie:: 100
Auf Bestellung:: 2083
Menge eingeben:

Der aktuelle Preis von MRFE6S9045NR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~30,38 $~~; ~~30,38 $~~

5: ~~29,04 $~~; ~~145,20 $~~

10: ~~28,02 $~~; ~~280,20 $~~

25: ~~24,45 $~~; ~~611,25 $~~

100: ~~23,93 $~~; ~~2 393,00 $~~

250: ~~22,93 $~~; ~~5 732,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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