STE180NE10

STE180NE10
Mfr. #:
STE180NE10
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 100 Volt 180 A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STE180NE10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STE180NE10 DatasheetSTE180NE10 Datasheet (P4-P6)STE180NE10 Datasheet (P7-P9)STE180NE10 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
STE180NE10 Mehr Informationen STE180NE10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
ISOTOP-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
360 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.1 mm
Länge:
38.2 mm
Serie:
STE180NE10
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
25.5 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
30 S
Abfallzeit:
440 ns
Produktart:
MOSFET
Anstiegszeit:
600 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
430 ns
Typische Einschaltverzögerungszeit:
100 ns
Gewichtseinheit:
1 oz
Tags
STE180N, STE18, STE1, STE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 180 A, 100 V, 6 mohm, 10 V, 3 V
***icroelectronics
N-CHANNEL 100V - 4.5 mOhm - 180A ISOTOP STripFET MOSFET
***ment14 APAC
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:360W; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Current Temperature:25°C; External Depth:38mm; External Length / Height:12.2mm; External Width:25.4mm; Fixing Centres:31.6mm; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; No. of Transistors:1; On State resistance @ Vgs = 10V:6mohm; Package / Case:ISOTOP; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Power Dissipation Ptot Max:360W; Pulse Current Idm:540A; Terminal Type:4mm Screw; Termination Type:Screw; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
STE180NE10
DISTI # 497-3166-5-ND
STMicroelectronicsMOSFET N-CH 100V 180A ISOTOP
RoHS: Compliant
Min Qty: 100
Container: Tube
Limited Supply - Call
    STE180NE10
    DISTI # 511-STE180NE10
    STMicroelectronicsMOSFET N-Ch 100 Volt 180 A
    RoHS: Compliant
    0
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      OMO.#: OMO-STE180NE10-STMICROELECTRONICS

      MOSFET N-CH 100V 180A ISOTOP
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von STE180NE10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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