CSD75301W1015

Mfr. #:: CSD75301W1015
Beschreibung:: MOSFET P-Ch-Dual Common Source Pwr MOSFETs
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD75301W1015 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD75301W1015 Mehr Informationen CSD75301W1015 Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DSBGA-6

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 1.2 A

Rds On - Drain-Source-Widerstand:: 100 mOhms

Vgs - Gate-Source-Spannung:: 8 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 800 mW

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 0.625 mm

Länge:: 1.5 mm

Produkt:: MOSFET Kleinsignal

Serie:: CSD75301W1015

Transistortyp:: 2 P-Channel

Breite:: 1 mm

Marke:: Texas Instruments

Abfallzeit:: 16 ns

Produktart:: MOSFET

Anstiegszeit:: 1.7 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 38 ns

Typische Einschaltverzögerungszeit:: 3 ns

Gewichtseinheit:: 0.000060 oz

Tags: CSD75, CSD7, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD75301W1015 Beschreibung

***as Instruments: P-Channel Dual Common Source NexFET Power MOSFET 6-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R

***et: Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2P-CH 20V 1.2A 6DSBGA

***th Star Micro: the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

***ark: P CH DUAL COMMON SOURCE POWER MOSFET, -20V, -1.2A, DSBGA-6; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; Module Configuration:Dual P Channel; On Resistance Rds(on):0.08ohm; Power Dissipation Pd:800mW

***nell: MOSFET, 2 CANALI P, 20V, 1.2A, 6DSBGA; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-1.2A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:800mW; Modello Case Transistor:DSBGA; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Configurazione Modulo:Doppio a Canale P; Corrente Continua di Drain Id, Canale P:-1.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza di Attivazione Rds(on), Canale P:0.15ohm; Temperatura di Esercizio Min:-55°C; Tensione Drain Source Vds, Canale P:-20V

Market price

Teil #	Beschreibung	Aktie	Preis
CSD75301W1015 DISTI # 296-24261-2-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD75301W1015 DISTI # 296-24261-1-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD75301W1015 DISTI # 296-24261-6-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD75301W1015 DISTI # CSD75301W1015	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD75301W1015) RoHS: Compliant Min Qty: 962	Americas - 0	962:$0.3769 964:$0.3589 1926:$0.3469 4810:$0.3349 9620:$0.3259
CSD75301W1015 DISTI # 595-CSD75301W1015	MOSFET P-Ch-Dual Common Source Pwr MOSFETs RoHS: Compliant	0
CSD75301W1015	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1760	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
CSD75301W1015 DISTI # 1892455	MOSFET, PP CH, 20V, 1.2A, 6DSBGA RoHS: Compliant	988	5:£0.6490 25:£0.5860 100:£0.4450 250:£0.4190 500:£0.3940

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: CSD75301W1015

OMO.#: OMO-CSD75301W1015

MOSFET P-Ch-Dual Common Source Pwr MOSFETs

Mfr.#: CSD75301W1015

OMO.#: OMO-CSD75301W1015-TEXAS-INSTRUMENTS

IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von CSD75301W1015 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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CSD75301W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes