FJN3302RTA

FJN3302RTA
Mfr. #:
FJN3302RTA
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3302RTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
10 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3 Kinked Lead
DC-Kollektor/Basisverstärkung hfe Min:
30
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FJN3302R
Verpackung:
Munitionspackung
DC-Stromverstärkung hFE Max:
30
Emitter- Basisspannung VEBO:
10 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Teil # Aliase:
FJN3302RTA_NL
Gewichtseinheit:
0.008466 oz
Tags
FJN3302R, FJN3302, FJN330, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans Digital BJT NPN 50V 100mA 3-Pin TO-92 Ammo
***el Electronic
Transistors Switching - Resistor Biased NPN Si Transistor Epitaxial
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***enic
TO-92-3L Bipolar Transistors - BJT ROHS
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
Teil # Mfg. Beschreibung Aktie Preis
FJN3302RTA
DISTI # V72:2272_06301037
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST16136
  • 15000:$0.0320
  • 6000:$0.0376
  • 3000:$0.0380
  • 1000:$0.0491
  • 500:$0.0722
  • 250:$0.0730
  • 100:$0.0737
  • 25:$0.1787
  • 10:$0.1806
  • 1:$0.2755
FJN3302RTA
DISTI # FJN3302RTACT-ND
ON SemiconductorTRANS PREBIAS NPN 0.3W TO92-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
47253In Stock
  • 1000:$0.0587
  • 500:$0.0864
  • 100:$0.1313
  • 10:$0.2480
  • 1:$0.3000
FJN3302RTA
DISTI # FJN3302RTATB-ND
ON SemiconductorTRANS PREBIAS NPN 0.3W TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)
42000In Stock
  • 100000:$0.0298
  • 50000:$0.0336
  • 10000:$0.0380
  • 6000:$0.0447
  • 2000:$0.0514
FJN3302RTA
DISTI # 29517802
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST16136
  • 15000:$0.0320
  • 6000:$0.0376
  • 3000:$0.0380
  • 1000:$0.0491
  • 500:$0.0722
  • 271:$0.0730
FJN3302RTA
DISTI # 27480477
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST4000
  • 100000:$0.0286
  • 50000:$0.0322
  • 10000:$0.0365
  • 6000:$0.0429
  • 2000:$0.0494
FJN3302RTA
DISTI # FJN3302RTA
ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin TO-92 Ammo - Ammo Pack (Alt: FJN3302RTA)
RoHS: Compliant
Min Qty: 24000
Container: Ammo Pack
Americas - 0
  • 24000:$0.0242
  • 28000:$0.0240
  • 52000:$0.0237
  • 120000:$0.0234
  • 240000:$0.0228
FJN3302RTA
DISTI # 82C2868
ON SemiconductorPre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),TO-92 RoHS Compliant: Yes13940
  • 1:$0.3190
  • 10:$0.2420
  • 100:$0.0920
  • 1000:$0.0640
  • 2000:$0.0480
  • 10000:$0.0430
  • 24000:$0.0400
  • 50000:$0.0340
FJN3302RTA
DISTI # 512-FJN3302RTA
ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
RoHS: Compliant
0
  • 1:$0.2900
  • 10:$0.1920
  • 100:$0.0800
  • 1000:$0.0550
  • 2000:$0.0430
  • 10000:$0.0370
  • 24000:$0.0350
  • 50000:$0.0320
  • 100000:$0.0280
FJN3302RTAFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
RoHS: Compliant
1490
  • 1:$0.0300
  • 25:$0.0300
  • 100:$0.0300
  • 500:$0.0300
  • 1000:$0.0300
FJN3302RTA
DISTI # 8070868
ON SemiconductorTRANSISTORFAIRCHILDFJN3302RTA, PK20000
  • 200:£0.0580
  • 1000:£0.0390
  • 2000:£0.0310
  • 10000:£0.0270
  • 20000:£0.0250
FJN3302RTA
DISTI # C1S541901539735
ON SemiconductorPre-Biased BJT
RoHS: Compliant
4000
  • 2000:$0.0436
FJN3302RTA
DISTI # C1S541901648370
ON SemiconductorPre-Biased BJT
RoHS: Compliant
16136
  • 250:$0.0730
  • 100:$0.0737
FJN3302RTA
DISTI # 2453878
ON SemiconductorBRT TRANSISTOR, 50V, 10KOHM, TO-226AA-3
RoHS: Compliant
0
  • 5:$0.1980
  • 250:$0.1680
  • 500:$0.0950
  • 1000:$0.0680
  • 2000:$0.0540
  • 6000:$0.0440
Bild Teil # Beschreibung
FJN4302RTA

Mfr.#: FJN4302RTA

OMO.#: OMO-FJN4302RTA

Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
MMBD914LT1G

Mfr.#: MMBD914LT1G

OMO.#: OMO-MMBD914LT1G

Diodes - General Purpose, Power, Switching 100V 200mA
SN74ACT14PWR

Mfr.#: SN74ACT14PWR

OMO.#: OMO-SN74ACT14PWR

Inverters Hex Schmitt-Trigger
RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

Thick Film Resistors - SMD 1K OHM 1%
QYX1H103KTP

Mfr.#: QYX1H103KTP

OMO.#: OMO-QYX1H103KTP

Film Capacitors 50volts 0.01uF
RCER71H104K0K1H03B

Mfr.#: RCER71H104K0K1H03B

OMO.#: OMO-RCER71H104K0K1H03B-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - Leaded 0.10uF 50volts X7R LS=5mm +/-10%
SN74ACT14PWR

Mfr.#: SN74ACT14PWR

OMO.#: OMO-SN74ACT14PWR-TEXAS-INSTRUMENTS

Inverters Hex Schmitt-Trigge
FJN4305RTA

Mfr.#: FJN4305RTA

OMO.#: OMO-FJN4305RTA-ON-SEMICONDUCTOR

TRANS PREBIAS PNP 300MW TO92-3
FJN4302RTA

Mfr.#: FJN4302RTA

OMO.#: OMO-FJN4302RTA-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
MMBD914LT1G

Mfr.#: MMBD914LT1G

OMO.#: OMO-MMBD914LT1G-ON-SEMICONDUCTOR

Diodes - General Purpose, Power, Switching 100V 200mA
Verfügbarkeit
Aktie:
14
Auf Bestellung:
1997
Menge eingeben:
Der aktuelle Preis von FJN3302RTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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