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MJB44H11G

MJB44H11G
Mfr. #:
MJB44H11G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 8A 80V 50W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MJB44H11G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJB44H11G DatasheetMJB44H11G Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
80 V
Kollektor- Basisspannung VCBO:
5 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
1 V
Maximaler DC-Kollektorstrom:
10 A
Bandbreitenprodukt fT gewinnen:
50 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
MJB44H11
Höhe:
4.83 mm
Länge:
10.29 mm
Verpackung:
Rohr
Breite:
9.65 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
10 A
DC-Kollektor/Basisverstärkung hfe Min:
60
Pd - Verlustleistung:
50 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
50
Unterkategorie:
Transistoren
Gewichtseinheit:
0.080777 oz
Tags
MJB44, MJB4, MJB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
***p One Stop
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2+Tab) D2PAK Tube
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
***ment14 APAC
POWER Transistor, NPN, 80V, D2-PAK; Tran; POWER Transistor, NPN, 80V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; No. of Pins:3Pins
***th Star Micro
D 2 PAK for Surface Mount . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***(Formerly Allied Electronics)
ON Semi MJB44H11T4G NPN Bipolar Transistor; 10 A; 80 V; 3-Pin D2PAK
***emi
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
***Yang
Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***enic
80V 2W 10A NPN TO-263-2 Bipolar Transistors - BJT ROHS
***nell
POWER TRANSISTOR, NPN, 80V, D2-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 50W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transisto
***(Formerly Allied Electronics)
ON Semi NJVMJB44H11T4G NPN Bipolar Transistor; 10 A; 80 V; 3-Pin D2PAK
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ical
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
***enic
80V 2W 10A NPN D2PAK Bipolar Transistors - BJT ROHS
***ure Electronics
NJVMJB Series NPN 50 W 80 V 10 A Surface Mount Power Transistor - TO-263-3
***nell
TRANSISTOR, AEC-Q101, NPN, 80V, TO-263; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 2W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***(Formerly Allied Electronics)
ON Semi MJB41CG NPN Bipolar Transistor; 6 A; 100 V; 3-Pin D2PAK
***p One Stop
Trans GP BJT NPN 100V 6A 2000mW Automotive 3-Pin(2+Tab) D2PAK Tube
***r Electronics
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
***ure Electronics
MJB Series 100 V 6 A NPN Complementary Silicon Plastic Power Transistor D2PAK-3
***ark
POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:3MHzRoHS Compliant: Yes
***et Europe
Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) D2PAK T/R
***ponent Stockers USA
8 A 400 V NPN Si POWER TRANSISTOR
***or
NOW WEEN - BUJ105AB - POWER BIPO
Teil # Mfg. Beschreibung Aktie Preis
MJB44H11G
DISTI # V99:2348_07305426		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		509
  • 2500:$0.4839
  • 1000:$0.5137
  • 500:$0.6763
  • 100:$0.7650
  • 10:$1.0016
  • 1:$1.2843
MJB44H11G
DISTI # V36:1790_07305426		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		489
  • 25000:$0.4436
  • 10000:$0.4575
  • 2500:$0.4754
  • 1000:$0.5137
  • 500:$0.6763
  • 100:$0.7650
  • 10:$1.0016
  • 1:$1.2843
MJB44H11G
DISTI # MJB44H11GOS-ND		ON SemiconductorTRANS NPN 80V 10A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		322In Stock
  • 5000:$0.5002
  • 2500:$0.5252
  • 500:$0.7128
  • 100:$0.8629
  • 50:$1.0504
  • 10:$1.1070
  • 1:$1.2400
MJB44H11G
DISTI # 25632830		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		8000
  • 1000:$0.4534
MJB44H11G
DISTI # 31608060		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		600
  • 250:$0.4493
  • 150:$0.4535
  • 100:$0.4594
MJB44H11G
DISTI # 30172932		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		509
  • 2500:$0.4839
  • 1000:$0.5137
  • 500:$0.6754
  • 100:$0.7651
  • 13:$1.0017
MJB44H11G
DISTI # 30573431		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		489
  • 25000:$0.4436
  • 10000:$0.4575
  • 2500:$0.4754
  • 1000:$0.5137
  • 500:$0.6754
  • 100:$0.7651
  • 14:$1.0017
MJB44H11G
DISTI # 30585623		ON SemiconductorTrans GP BJT NPN 80V 10A Automotive 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		155
  • 40:$0.6260
MJB44H11G
DISTI # MJB44H11G		ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail - Rail/Tube (Alt: MJB44H11G)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 2077
  • 500:$0.4411
  • 250:$0.4523
  • 150:$0.4581
  • 100:$0.4640
  • 50:$0.4671
MJB44H11G
DISTI # MJB44H11G		ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail (Alt: MJB44H11G)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€0.4519
  • 300:€0.4869
  • 200:€0.5279
  • 100:€0.5759
  • 50:€0.7039
MJB44H11G
DISTI # MJB44H11G		ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: MJB44H11G)
RoHS: Compliant
Min Qty: 625
Container: Bulk		Americas - 0
  • 6250:$0.4929
  • 3125:$0.5059
  • 1875:$0.5119
  • 1250:$0.5189
  • 625:$0.5219
MJB44H11G
DISTI # 42K1267		ON SemiconductorTrans GP BJT NPN 80V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: 42K1267)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 10000:$0.4580
  • 2500:$0.4760
  • 1000:$0.5360
  • 500:$0.6790
  • 100:$0.7690
  • 10:$1.0100
  • 1:$1.1800
MJB44H11G
DISTI # 82Y6984		ON SemiconductorTRANSISTOR, BIPOL, NPN, 80V, TO-263-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:50MHz,Power Dissipation Pd:50W,DC Collector Current:10A,DC Current Gain hFE:40hFE,Transistor Case RoHS Compliant: Yes385
  • 10000:$0.4630
  • 2500:$0.4810
  • 1000:$0.5410
  • 500:$0.6860
  • 100:$0.7770
  • 10:$1.0200
  • 1:$1.1900
MJB44H11G
DISTI # 42K1267		ON SemiconductorPOWER TRANSISTOR, NPN, 80V, D2-PAK,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:50MHz,Power Dissipation Pd:50W,DC Collector Current:10A,DC Current Gain hFE:60hFE,No. of Pins:3Pins RoHS Compliant: Yes242
  • 10000:$0.4630
  • 2500:$0.4810
  • 1000:$0.5410
  • 500:$0.6860
  • 100:$0.7770
  • 10:$1.0200
  • 1:$1.1900
MJB44H11G.
DISTI # 27AC8946		ON SemiconductorBIP D2PAK NPN 8A 80V ROHS COMPLIANT: YES0
  • 10000:$0.4630
  • 2500:$0.4810
  • 1000:$0.5410
  • 500:$0.6860
  • 100:$0.7930
  • 10:$1.0500
  • 1:$1.2200
MJB44H11G
DISTI # 863-MJB44H11G		ON SemiconductorBipolar Transistors - BJT 8A 80V 50W NPN
RoHS: Compliant		4529
  • 1:$1.1800
  • 10:$1.0100
  • 100:$0.7690
  • 500:$0.6790
  • 1000:$0.5360
  • 2500:$0.4760
  • 10000:$0.4580
MJB44H11GON SemiconductorPower Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RoHS: Compliant		3850
  • 1000:$0.5300
  • 500:$0.5500
  • 100:$0.5800
  • 25:$0.6000
  • 1:$0.6500
MJB44H11G
DISTI # 2535625		ON SemiconductorTRANSISTOR, BIPOL, NPN, 80V, TO-263-3
RoHS: Compliant		385
  • 25000:$0.6830
  • 10000:$0.7040
  • 2500:$0.7320
  • 1000:$0.8250
  • 500:$1.0500
  • 100:$1.1900
  • 10:$1.5600
  • 1:$1.8200
MJB44H11G.
DISTI # 1705896		ON SemiconductorPOWER TRANSISTOR, NPN, 80V, D2-PAK
RoHS: Compliant		242
  • 25000:$0.6830
  • 10000:$0.7040
  • 2500:$0.7320
  • 1000:$0.8250
  • 500:$1.0500
  • 100:$1.1900
  • 10:$1.5600
  • 1:$1.8200
MJB44H11G
DISTI # 2535625		ON SemiconductorTRANSISTOR, BIPOL, NPN, 80V, TO-263-3756
  • 500:£0.4970
  • 250:£0.5300
  • 100:£0.5630
  • 25:£0.7400
  • 5:£0.8660
Bild Teil # Beschreibung
HIP4080AIBZT

Mfr.#: HIP4080AIBZT

OMO.#: OMO-HIP4080AIBZT

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Mfr.#: PBSS4360XF

OMO.#: OMO-PBSS4360XF

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MJB45H11G

Mfr.#: MJB45H11G

OMO.#: OMO-MJB45H11G

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Mfr.#: MURS320T3G

OMO.#: OMO-MURS320T3G

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MBRS1100T3G

Mfr.#: MBRS1100T3G

OMO.#: OMO-MBRS1100T3G

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STPS1045B-TR

Mfr.#: STPS1045B-TR

OMO.#: OMO-STPS1045B-TR

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H8680RBYA

Mfr.#: H8680RBYA

OMO.#: OMO-H8680RBYA

 Metal Film Resistors - Through Hole H8 680R 0.1% 15PPM
HIP4080AIBZT

Mfr.#: HIP4080AIBZT

OMO.#: OMO-HIP4080AIBZT-INTERSIL

 Gate Drivers VERSION OF HIP4080AI BT
H8680RBYA

Mfr.#: H8680RBYA

OMO.#: OMO-H8680RBYA-TE-CONNECTIVITY-AMP

 Metal Film Resistors - Through Hole H8 680R 0.1% 15PPM
MURS320T3G

Mfr.#: MURS320T3G

OMO.#: OMO-MURS320T3G-ON-SEMICONDUCTOR

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von MJB44H11G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,18 $
1,18 $
10
1,01 $
10,10 $
100
0,77 $
76,90 $
500
0,68 $
339,50 $
1000
0,54 $
536,00 $
2500
0,48 $
1 190,00 $
10000
0,46 $
4 580,00 $
25000
0,44 $
11 100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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