MR0A08BYS35

MR0A08BYS35
Mfr. #:
MR0A08BYS35
Hersteller:
Everspin Technologies
Beschreibung:
NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MR0A08BYS35 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MR0A08BYS35 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Everspin-Technologien
Produktkategorie:
NVRAM
RoHS:
Y
Paket / Koffer:
TSOP-44
Oberflächentyp:
Parallel
Speichergröße:
1 Mbit
Organisation:
128 k x 8
Datenbusbreite:
8 bit
Zugriffszeit:
35 ns
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
3 V
Betriebsversorgungsstrom:
55 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Serie:
MR0A08B
Verpackung:
Tablett
Marke:
Everspin-Technologien
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
NVRAM
Werkspackungsmenge:
135
Unterkategorie:
Speicher & Datenspeicherung
Tags
MR0A0, MR0A, MR0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
MR0A08 Series 128 K x 8 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44
***ical
MRAM 1Mbit Parallel Interface 3.3V 44-Pin TSOP-II Tray
***i-Key
IC RAM 1MBIT PARALLEL 44TSOP2
***S
new, original packaged
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 
Teil # Mfg. Beschreibung Aktie Preis
MR0A08BYS35
DISTI # 819-1002-ND
Everspin TechnologiesIC RAM 1M PARALLEL 44TSOP2
RoHS: Compliant
Min Qty: 1
Container: Tray
761In Stock
  • 1080:$8.0465
  • 540:$8.1675
  • 270:$8.2522
  • 135:$8.6818
  • 50:$9.8616
  • 25:$9.9160
  • 10:$10.1460
  • 1:$10.9600
MR0A08BYS35R
DISTI # MR0A08BYS35R-ND
Everspin TechnologiesIC RAM 1M PARALLEL 44TSOP2
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1500:$8.3125
MR0A08BYS35
DISTI # MR0A08BYS35
Everspin TechnologiesNVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II Tray (Alt: MR0A08BYS35)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€9.5900
  • 10:€8.7900
  • 25:€8.3900
  • 50:€8.0900
  • 100:€7.7900
  • 500:€7.4900
  • 1000:€6.9900
MR0A08BYS35R
DISTI # MR0A08BYS35R
Everspin TechnologiesNVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR0A08BYS35R)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel
Europe - 0
  • 1500:€9.0900
  • 3000:€8.6900
  • 6000:€8.3900
  • 9000:€7.7900
  • 15000:€7.1900
MR0A08BYS35
DISTI # 936-MR0A08BYS35
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
220
  • 1:$10.9500
  • 10:$10.1500
  • 25:$9.9200
  • 50:$9.8600
  • 100:$8.6800
  • 250:$8.2500
  • 500:$8.1700
MR0A08BYS35R
DISTI # 936-MR0A08BYS35R
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
0
  • 1:$11.3200
  • 10:$10.4800
  • 25:$10.2400
  • 50:$10.1900
  • 100:$8.9700
  • 250:$8.5300
  • 500:$8.4400
  • 1000:$8.3100
  • 1500:$7.9300
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5P49V5901B000NLGI

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OMO.#: OMO-5P49V5901B000NLGI

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INA219AIDCNR

Mfr.#: INA219AIDCNR

OMO.#: OMO-INA219AIDCNR

Current & Power Monitors & Regulators 0-Drift Bi-Dir Crnt Pwr Monitor
TPS3808G12DBVR

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OMO.#: OMO-TPS3808G12DBVR

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BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138

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OMO.#: OMO-ADV7391BCPZ

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IS42S16400J-7TL

Mfr.#: IS42S16400J-7TL

OMO.#: OMO-IS42S16400J-7TL

DRAM 64M (4Mx16) 143MHz SDR SDRAM, 3.3V
PIC12F675T-I/SN

Mfr.#: PIC12F675T-I/SN

OMO.#: OMO-PIC12F675T-I-SN

8-bit Microcontrollers - MCU 1.75KB 64 RAM 6 I/O Ind Temp SOIC8
IS42S16400J-7TL

Mfr.#: IS42S16400J-7TL

OMO.#: OMO-IS42S16400J-7TL-INTEGRATED-SILICON-SOLUTION

DRAM 64M (4Mx16) 143MHz SDR SDRAM, 3.3V
Verfügbarkeit
Aktie:
147
Auf Bestellung:
2130
Menge eingeben:
Der aktuelle Preis von MR0A08BYS35 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,95 $
10,95 $
10
10,15 $
101,50 $
25
9,92 $
248,00 $
50
9,86 $
493,00 $
100
8,68 $
868,00 $
250
8,25 $
2 062,50 $
500
8,17 $
4 085,00 $
1000
8,05 $
8 050,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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