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IRLR8729TRPBF

IRLR8729TRPBF
Mfr. #:
IRLR8729TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLR8729TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8729TRPBF DatasheetIRLR8729TRPBF Datasheet (P4-P6)IRLR8729TRPBF Datasheet (P7-P9)IRLR8729TRPBF Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
IRLR8729TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
58 A
Rds On - Drain-Source-Widerstand:
11.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.35 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
55 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
91 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
47 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
SP001569082
Gewichtseinheit:
0.139332 oz
Tags
IRLR8729T, IRLR8729, IRLR872, IRLR87, IRLR8, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 30V, 58A, 8.9 MOHM, 10 NC QG, LOGIC LEVEL, D-PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ineon
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
***ark
N CH POWER MOSFET, HEXFET, 30V, 58A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRLR8729TRPBF
DISTI # V72:2272_13889893		Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		3999
  • 3000:$0.1538
  • 1000:$0.1831
  • 500:$0.2391
  • 250:$0.2417
  • 100:$0.2442
  • 25:$0.4039
  • 10:$0.4152
  • 1:$0.5111
IRLR8729TRPBF
DISTI # IRLR8729TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 58A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		724In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
IRLR8729TRPBF
DISTI # IRLR8729TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 58A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		724In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
IRLR8729TRPBF
DISTI # IRLR8729TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 58A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		On Order
  • 2000:$0.2046
IRLR8729TRPBF
DISTI # 29437599		Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		6000
  • 20000:$0.1449
  • 12000:$0.1516
  • 8000:$0.1564
  • 4000:$0.1612
  • 2000:$0.1621
IRLR8729TRPBF
DISTI # 30331686		Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		3999
  • 3000:$0.1538
  • 1000:$0.1831
  • 500:$0.2391
  • 250:$0.2417
  • 100:$0.2442
  • 53:$0.4039
IRLR8729TRPBF
DISTI # IRLR8729TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR8729TRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 2000
  • 2000:$0.1689
  • 4000:$0.1679
  • 8000:$0.1629
  • 12000:$0.1579
  • 20000:$0.1509
IRLR8729TRPBF
DISTI # 13AC9246		Infineon Technologies AGMOSFET, N-CH, 30V, 58A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes1080
  • 1:$0.5530
  • 10:$0.4590
  • 25:$0.4040
  • 50:$0.3470
  • 100:$0.2920
  • 250:$0.2720
  • 500:$0.2530
  • 1000:$0.2330
IRLR8729TRPBF
DISTI # 70019885		Infineon Technologies AGMOSFET,30V,58A,8.9 MOHM,10 NC QG,LOGIC LEVEL,D-PAK
RoHS: Compliant		0
  • 4000:$1.1400
  • 8000:$1.1170
  • 20000:$1.0830
  • 40000:$1.0370
  • 100000:$0.9690
IRLR8729TRPBF
DISTI # 942-IRLR8729TRPBF		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC
RoHS: Compliant		761
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 2000:$0.1740
IRLR8729TRPBF
DISTI # IRLR8729PBF-GURT		Infineon Technologies AGN-LogL 30V 58A 55W 0,0089R TO252AA
RoHS: Compliant		0
  • 50:€0.2140
  • 100:€0.1740
  • 500:€0.1540
  • 3000:€0.1485
IRLR8729TRPBF
DISTI # 2726026		Infineon Technologies AGMOSFET, N-CH, 30V, 58A, TO-252AA
RoHS: Compliant		1080
  • 1:$1.0400
  • 10:$0.8680
  • 100:$0.6510
  • 500:$0.4770
  • 1000:$0.3690
IRLR8729TRPBF
DISTI # 2726026		Infineon Technologies AGMOSFET, N-CH, 30V, 58A, TO-252AA
RoHS: Compliant		1210
  • 5:£0.3760
  • 25:£0.3540
  • 100:£0.2020
  • 250:£0.1930
  • 500:£0.1830
IRLR8729TRPBF
DISTI # C1S322000504815		Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		3999
  • 250:$0.2424
  • 100:$0.2445
  • 25:$0.3711
  • 10:$0.4123
IRLR8729TRPBF
DISTI # C1S322000504824		Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		6000
  • 2000:$0.2300
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von IRLR8729TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,52 $
0,52 $
10
0,43 $
4,34 $
100
0,26 $
26,50 $
1000
0,20 $
205,00 $
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