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IXTR90P20P

IXTR90P20P
Mfr. #:
IXTR90P20P
Hersteller:
Littelfuse
Beschreibung:
MOSFET -90.0 Amps -200V 0.048 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTR90P20P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTR90P20P DatasheetIXTR90P20P Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
53 A
Rds On - Drain-Source-Widerstand:
48 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
205 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
312 W
Kanalmodus:
Erweiterung
Handelsname:
PolarP
Verpackung:
Rohr
Höhe:
21.34 mm
Länge:
16.13 mm
Serie:
IXTR90P20
Typ:
PolarP Leistungs-MOSFET
Breite:
5.21 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
30 S
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
60 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
89 ns
Typische Einschaltverzögerungszeit:
32 ns
Gewichtseinheit:
0.186952 oz
Tags
IXTR, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET P-CH 200V 53A ISOPLUS247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V
*** Source Electronics
Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 56A TO-220AB
***ure Electronics
Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 380 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 200V, 56A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:40ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220
*** Source Electronics
MOSFET N-CH 200V 61A TO-220 / Trans MOSFET N-CH 200V 61A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 200 V 41 mO 417 W Flange Mount Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-220; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:244A; Repetitive Avalanche Energy Max:41.7mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC
***ure Electronics
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
***fin
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
*** Source Electronics
Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
***ure Electronics
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ark
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ure Electronics
N-Channel 200 V 0.045 Ohm Flange Mount STripFET Power MosFet - TO-220
***ical
Trans MOSFET N-CH 200V 40A 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***ark
MOSFET, N CHANNEL, 200V, 40A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***roFlash
Mosfet Transistor, N Channel, 40 A, 200 V, 0.038 Ohm, 10 V, 3 V Rohs Compliant: Yes
***ure Electronics
N-Channel 200 V 45 mOhm Flange Mount STripFET Power Mosfet - TO-247
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***ark
MOSFET, N CH, 200V, 40A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.038ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Teil # Mfg. Beschreibung Aktie Preis
IXTR90P20P
DISTI # IXTR90P20P-ND		IXYS CorporationMOSFET P-CH 200V 53A ISOPLUS247
RoHS: Compliant
Min Qty: 300
Container: Tube		Temporarily Out of Stock
  • 300:$13.1797
IXTR90P20P
DISTI # 747-IXTR90P20P		IXYS CorporationMOSFET -90.0 Amps -200V 0.048 Rds
RoHS: Compliant		0
  • 1:$19.5600
  • 10:$17.7800
  • 25:$16.4400
  • 50:$15.1300
  • 100:$14.7600
  • 250:$13.5300
  • 500:$12.2800
Bild Teil # Beschreibung
IXTR90P20P

Mfr.#: IXTR90P20P

OMO.#: OMO-IXTR90P20P

 MOSFET -90.0 Amps -200V 0.048 Rds
IXTR90P10P

Mfr.#: IXTR90P10P

OMO.#: OMO-IXTR90P10P

 MOSFET -57.0 Amps -100V 0.270 Rds
IXTR90P20P

Mfr.#: IXTR90P20P

OMO.#: OMO-IXTR90P20P-IXYS-CORPORATION

 Darlington Transistors MOSFET -90.0 Amps -200V 0.048 Rds
IXTR90P10P

Mfr.#: IXTR90P10P

OMO.#: OMO-IXTR90P10P-IXYS-CORPORATION

 MOSFET -57.0 Amps -100V 0.270 Rds
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IXTR90P20P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
19,56 $
19,56 $
10
17,78 $
177,80 $
25
16,44 $
411,00 $
50
15,13 $
756,50 $
100
14,76 $
1 476,00 $
250
13,53 $
3 382,50 $
500
12,28 $
6 140,00 $
1000
11,21 $
11 210,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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