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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI3441BDV-T1-E3 DISTI # SI3441BDV-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 20V 2.45A 6-TSOP Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI3441BDV-T1-E3 DISTI # SI3441BDV-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 20V 2.45A 6-TSOP Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI3441BDV-T1-E3 DISTI # SI3441BDV-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 20V 2.45A 6-TSOP Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI3441BDV-T1-E3 DISTI # 70026099 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -20V,RDS(ON) 0.07Ohm,ID -2.45A,TSOP-6,PD 0.86W,VGS +/-8V RoHS: Not Compliant | 0 |
|
| SI3441BDV-T1-E3 | Vishay Semiconductors | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.45A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 8996 |
|
| SI3441BDV-T1-E3 | Vishay Intertechnologies | 2900 | ||
| SI3441BDV-T1-E3 | Vishay Siliconix | 11245 |
| |
| SI3441BDVT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2450 | |
| SI3441BDVT1E3 | 2213 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI3441BDV-T1-GE3 OMO.#: OMO-SI3441BDV-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI3433CDV-GE3 |
|
Mfr.#: SI3441BDV-T1-GE3 OMO.#: OMO-SI3441BDV-T1-GE3-VISHAY |
IGBT Transistors MOSFET 20V 2.9A 1.25W 130mohm @ 2.5V |
|
Mfr.#: SI3441BDV OMO.#: OMO-SI3441BDV-1190 |
Neu und Original |
|
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Mfr.#: SI3441BDV(B1HAB) OMO.#: OMO-SI3441BDV-B1HAB--1190 |
Neu und Original |
|
|
Mfr.#: SI3441BDV-T1 OMO.#: OMO-SI3441BDV-T1-1190 |
Neu und Original |
|
|
Mfr.#: SI3441BDV-T1-E3 OMO.#: OMO-SI3441BDV-T1-E3-VISHAY |
MOSFET P-CH 20V 2.45A 6-TSOP |
|
|
Mfr.#: SI3441BDV-TI-E3 OMO.#: OMO-SI3441BDV-TI-E3-1190 |
Neu und Original |
|
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Mfr.#: SI3441BDVT1 OMO.#: OMO-SI3441BDVT1-1190 |
Neu und Original |