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IXYJ20N120C3D1

IXYJ20N120C3D1
Mfr. #:
IXYJ20N120C3D1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYJ20N120C3D1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYJ20N120C3D1 DatasheetIXYJ20N120C3D1 Datasheet (P4-P6)IXYJ20N120C3D1 Datasheet (P7)
ECAD Model:
Mehr Informationen:
IXYJ20N120C3D1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
4 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
21 A
Pd - Verlustleistung:
105 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXYJ20N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
21 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
1.340411 oz
Tags
IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 21A 105000mW Automotive 3-Pin(3+Tab) TO-247 ISO
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
***i-Key
IGBT 1200V 21A 105W TO247
***ark
Igbt, Single, 1.2Kv, 36A, To 247Ad Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
***nell
IGBT, SINGLE, 1.2KV, 36A, TO-247AD; DC Collector Current: 36A; Collector Emitter Saturation Voltage Vce(on): 4V; Power Dissipation Pd: 230W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of P
***p One Stop Global
Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
***el Electronic
Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***el Electronic
Inductor RF Chip Thin Film 4.2nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ure Electronics
IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ure Electronics
IXYH50N120C3D1 Series 1200 V 105 A Flange Mount Siode GENX3 IGBT - TO-247AD
***el Electronic
Trans IGBT Chip N-CH 1.2KV 90A 3-Pin(3+Tab) TO-247AD
***i-Key
IGBT 1200V 90A 625W TO247
***S
new, original packaged
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXYJ20N120C3D1
DISTI # 30283793		IXYS Corporation1200V High-Speed IGBT For 20-50KHz Switching
RoHS: Compliant		60
  • 500:$7.4208
  • 250:$7.9296
  • 100:$8.6976
  • 50:$8.9184
  • 30:$9.4656
IXYJ20N120C3D1
DISTI # IXYJ20N120C3D1-ND		IXYS CorporationIGBT 1200V 21A 105W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		58In Stock
  • 510:$8.1149
  • 270:$8.6746
  • 120:$9.5141
  • 30:$10.3537
  • 10:$11.1930
  • 1:$12.3100
IXYJ20N120C3D1
DISTI # C1S331700111339		IXYS CorporationTrans IGBT Chip N-CH 1200V 21A 105000mW Automotive 3-Pin(3+Tab) TO-247 ISO
RoHS: Compliant		60
  • 30:$12.1000
IXYJ20N120C3D1
DISTI # 747-IXYJ20N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT30
  • 1:$11.7300
  • 10:$10.6600
  • 25:$9.8600
  • 50:$9.2900
  • 100:$9.0600
  • 250:$8.2600
  • 500:$7.7300
IXYJ20N120C3D1
DISTI # 8080209P		IXYS CorporationIGBT 1200V 9A XPT GENX3 DIODE ISO TO247, TU60
  • 5:£4.7000
Bild Teil # Beschreibung
SGF5N150UFTU

Mfr.#: SGF5N150UFTU

OMO.#: OMO-SGF5N150UFTU

 IGBT Transistors 1500V / 5A
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
SGF5N150UFTU

Mfr.#: SGF5N150UFTU

OMO.#: OMO-SGF5N150UFTU-ON-SEMICONDUCTOR

 IGBT Transistors 1500V / 5A
Verfügbarkeit
Aktie:
27
Auf Bestellung:
2010
Menge eingeben:
Der aktuelle Preis von IXYJ20N120C3D1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,73 $
11,73 $
10
10,66 $
106,60 $
25
9,86 $
246,50 $
50
9,29 $
464,50 $
100
9,06 $
906,00 $
250
8,26 $
2 065,00 $
500
7,73 $
3 865,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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