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SIA106DJ-T1-GE3

SIA106DJ-T1-GE3
Mfr. #:
SIA106DJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 60V Vds 20V Vgs PowerPAK SC-70
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA106DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA106DJ-T1-GE3 DatasheetSIA106DJ-T1-GE3 Datasheet (P4-P6)SIA106DJ-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIA106DJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SC-70-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
18.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
13.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
19 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIA
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SIA10, SIA1, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIA106DJ-T1-GE3
DISTI # SIA106DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 60V POWERPAK SC-70
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5970In Stock
  • 1000:$0.3855
  • 500:$0.4819
  • 100:$0.6096
  • 10:$0.7950
  • 1:$0.9000
SIA106DJ-T1-GE3
DISTI # SIA106DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 60V POWERPAK SC-70
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5970In Stock
  • 1000:$0.3855
  • 500:$0.4819
  • 100:$0.6096
  • 10:$0.7950
  • 1:$0.9000
SIA106DJ-T1-GE3
DISTI # SIA106DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 60V POWERPAK SC-70
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3119
  • 6000:$0.3158
  • 3000:$0.3392
SIA106DJ-T1-GE3
DISTI # SIA106DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 12A 6-Pin SC-70 - Tape and Reel (Alt: SIA106DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2849
  • 18000:$0.2929
  • 12000:$0.3009
  • 6000:$0.3139
  • 3000:$0.3239
SIA106DJ-T1-GE3
DISTI # 59AC7302		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 50000:$0.2880
  • 30000:$0.3010
  • 20000:$0.3230
  • 10000:$0.3460
  • 5000:$0.3750
  • 1:$0.3840
SIA106DJ-T1-GE3
DISTI # 78AC6484		Vishay IntertechnologiesMOSFET, N-CH, 60V, 12A, 150DEG C, 19W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0142ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes6000
  • 1000:$0.3610
  • 500:$0.4500
  • 250:$0.4980
  • 100:$0.5450
  • 50:$0.6030
  • 25:$0.6610
  • 10:$0.7180
  • 1:$0.8890
SIA106DJ-T1-GE3
DISTI # 78-SIA106DJ-T1-GE3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SC-70
RoHS: Compliant		5740
  • 1:$0.8800
  • 10:$0.7110
  • 100:$0.5400
  • 500:$0.4460
  • 1000:$0.3570
  • 3000:$0.3240
SIA106DJ-T1-GE3
DISTI # 1783667		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET POWERPAK SC-, RL6000
  • 3000:£0.2400
SIA106DJ-T1-GE3
DISTI # 2932891		Vishay IntertechnologiesMOSFET, N-CH, 60V, 12A, 150DEG C, 19W6000
  • 500:£0.3260
  • 250:£0.3610
  • 100:£0.3950
  • 25:£0.5280
  • 5:£0.5860
SIA106DJ-T1-GE3
DISTI # 2932891		Vishay IntertechnologiesMOSFET, N-CH, 60V, 12A, 150DEG C, 19W
RoHS: Compliant		6000
  • 1000:$0.5190
  • 500:$0.5490
  • 250:$0.6460
  • 100:$0.7850
  • 10:$0.9990
  • 1:$1.2100
Bild Teil # Beschreibung
TC74A7-3.3VCTTR

Mfr.#: TC74A7-3.3VCTTR

OMO.#: OMO-TC74A7-3-3VCTTR-MICROCHIP-TECHNOLOGY

 Board Mount Temperature Sensors Digital Thermal
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SIA106DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,88 $
0,88 $
10
0,71 $
7,11 $
100
0,54 $
54,00 $
500
0,45 $
223,00 $
1000
0,36 $
357,00 $
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