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IRF8707GPBF

IRF8707GPBF
Mfr. #:
IRF8707GPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8707GPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8707GPBF DatasheetIRF8707GPBF Datasheet (P4-P6)IRF8707GPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
17.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
6.2 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
95
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001575436
Gewichtseinheit:
0.019048 oz
Tags
IRF8707G, IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC
***ied Electronics & Automation
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***th Star Micro
MOSFET N-CH 30V 11A 8-SOIC
***nell
N CHANNEL MOSFET, 30V, 11mA
***ark
N CHANNEL MOSFET, 30V, 11mA; Transistor Polarity:N Channel; Continuous Drain Current, Id:11mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.119ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 11mA; Transistor; N CHANNEL MOSFET, 30V, 11mA; Transistor Polarity:N Channel; Continuous Drain Current Id:11mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):119mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:8
Teil # Mfg. Beschreibung Aktie Preis
IRF8707GPBF
DISTI # IRF8707GPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8707GPBF
    DISTI # 70019207    		Infineon Technologies AGMOSFET,30V,11A,11.9 MOHM,6.2 NC QG,SO-8,HALOGEN-FREE
    RoHS: Compliant    		0
    • 3800:$0.3120
    • 7600:$0.2840
    • 11400:$0.2600
    • 15200:$0.2400
    • 19000:$0.2230
    IRF8707GPBF
    DISTI # 942-IRF8707GPBF    		Infineon Technologies AGMOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC
    RoHS: Compliant    		0
      IRF8707GPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 1140
        Bild Teil # Beschreibung
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von IRF8707GPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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