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FFSB20120A

FFSB20120A
Mfr. #:
FFSB20120A
Hersteller:
ON Semiconductor
Beschreibung:
Schottky Diodes & Rectifiers SIC TO263 SBD 20A 1 200V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FFSB20120A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FFSB20120A Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Wenn - Vorwärtsstrom:
32 A
Vrrm - Repetitive Sperrspannung:
1200 V
Vf - Durchlassspannung:
1.45 V
Ifsm - Vorwärtsstoßstrom:
135 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
200 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Spule
Marke:
ON Semiconductor
Pd - Verlustleistung:
333 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
800
Unterkategorie:
Dioden & Gleichrichter
Vr - Sperrspannung:
1200 V
Tags
FFSB2, FFSB, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Bild Teil # Beschreibung
FFSB2065BDN-F085

Mfr.#: FFSB2065BDN-F085

OMO.#: OMO-FFSB2065BDN-F085

 Schottky Diodes & Rectifiers Auto SiC Schottky Diode, 650 V
FFSB20120A

Mfr.#: FFSB20120A

OMO.#: OMO-FFSB20120A

 Schottky Diodes & Rectifiers SIC TO263 SBD 20A 1 200V
FFSB20120A-F085

Mfr.#: FFSB20120A-F085

OMO.#: OMO-FFSB20120A-F085-ON-SEMICONDUCTOR

 Silicon Carbide Schottky Diode
FFSB2065B-F085

Mfr.#: FFSB2065B-F085

OMO.#: OMO-FFSB2065B-F085-1190

 650V 20A SIC SBD GEN1.5
FFSB2065BDN-F085

Mfr.#: FFSB2065BDN-F085

OMO.#: OMO-FFSB2065BDN-F085-1190

 SIC DIODE 650V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von FFSB20120A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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