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AUIRF7343QTR

AUIRF7343QTR
Mfr. #:
AUIRF7343QTR
Hersteller:
Infineon / IR
Beschreibung:
MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AUIRF7343QTR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRF7343QTR DatasheetAUIRF7343QTR Datasheet (P4-P6)AUIRF7343QTR Datasheet (P7-P9)AUIRF7343QTR Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
4.7 A
Rds On - Drain-Source-Widerstand:
65 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
24 nC
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel, 1 P-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001517450
Gewichtseinheit:
0.019048 oz
Tags
AUIRF734, AUIRF73, AUIRF7, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R
***ark
TAPE AND REEL / Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SO-8 Package
***ure Electronics
N-P Channel 55 V 3.8 mOhm Surface Mount HEXFET Power Mosfet - SOIC-8
***
Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SOIC
***ied Electronics & Automation
MOSFET Dual N/P-Ch 55V 4.7A/3.4A SOIC8
***roFlash
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Port Injection; Solenoid Injection
***nell
MOSFET,NP CH,55V,4.7A,3.4A,SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 4.7A; Continuous Drain Current Id, P Channel: -3.4A; Drain Source Voltage Vds, N Channel: 55V; Drain Source Voltage Vds, P Channel: -55V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.043ohm; On Resistance Rds(on), P Channel: 0.095ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
AUIRF7343QTR
DISTI # 30163331		Infineon Technologies AGTrans MOSFET N/P-CH Si 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.8687
AUIRF7343QTR
DISTI # AUIRF7343QCT-ND		Infineon Technologies AGMOSFET N/P-CH 55V 4.7/3.4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5716In Stock
  • 1000:$0.8890
  • 500:$1.0729
  • 100:$1.3059
  • 10:$1.6250
  • 1:$1.8100
AUIRF7343QTR
DISTI # AUIRF7343QDKR-ND		Infineon Technologies AGMOSFET N/P-CH 55V 4.7/3.4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5716In Stock
  • 1000:$0.8890
  • 500:$1.0729
  • 100:$1.3059
  • 10:$1.6250
  • 1:$1.8100
AUIRF7343QTR
DISTI # AUIRF7343QTR-ND		Infineon Technologies AGMOSFET N/P-CH 55V 4.7/3.4A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 12000:$0.7540
  • 8000:$0.7738
  • 4000:$0.8036
AUIRF7343QTR
DISTI # V36:1790_13892111		Infineon Technologies AGTrans MOSFET N/P-CH Si 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R
RoHS: Compliant		0
    AUIRF7343QTR
    DISTI # V72:2272_13892111    		Infineon Technologies AGTrans MOSFET N/P-CH Si 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R
    RoHS: Compliant    		0
      AUIRF7343QTR
      DISTI # AUIRF7343QTR      		Infineon Technologies AGTrans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R - Rail/Tube (Alt: AUIRF7343QTR)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tube      		Americas - 0
      • 40000:$0.8639
      • 24000:$0.8799
      • 16000:$0.9099
      • 8000:$0.9439
      • 4000:$0.9799
      AUIRF7343QTR
      DISTI # SP001517450      		Infineon Technologies AGTrans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R (Alt: SP001517450)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel      		Europe - 0
      • 40000:€0.7549
      • 24000:€0.8089
      • 16000:€0.8719
      • 8000:€0.9439
      • 4000:€1.1329
      AUIRF7343QTR
      DISTI # 43AC2192      		Infineon Technologies AGMOSFET, AEC-Q101, DUAL, 55V, 4.7A,Transistor Polarity:Dual N and P Channel,Continuous Drain Current Id:4.7A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,RoHS Compliant: Yes485
      • 1000:$0.8300
      • 500:$1.0000
      • 250:$1.0700
      • 100:$1.1400
      • 50:$1.2400
      • 25:$1.3300
      • 10:$1.4200
      • 1:$1.6800
      AUIRF7343QTR
      DISTI # 942-AUIRF7343QTR      		Infineon Technologies AGMOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms
      RoHS: Compliant      		3238
      • 1:$1.8000
      • 10:$1.6200
      • 100:$1.3000
      • 500:$1.0700
      • 1000:$0.8890
      • 2000:$0.8170
      AUIRF7343QTR
      DISTI # TMOS1394      		Infineon Technologies AGN/P-CH 55V 4,7/3,4A 50mOhm SO8
      RoHS: Compliant      		Stock DE - 70Stock HK - 0Stock US - 0
      • 1:$1.1015
      • 3:$1.0386
      • 7:$0.9756
      • 20:$0.8812
      • 54:$0.8497
      AUIRF7343QTR
      DISTI # 2803372      		Infineon Technologies AGMOSFET, AEC-Q101, DUAL, 55V, 4.7A3425
      • 500:£0.7720
      • 250:£0.8260
      • 100:£0.8790
      • 10:£1.1400
      • 1:£1.4700
      AUIRF7343QTR
      DISTI # 2803372      		Infineon Technologies AGMOSFET, AEC-Q101, DUAL, 55V, 4.7A
      RoHS: Compliant      		375
      • 5000:$1.2000
      • 1000:$1.2600
      • 500:$1.3300
      • 250:$1.5400
      • 100:$1.8200
      • 25:$2.2300
      • 5:$2.5600
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von AUIRF7343QTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,80 $
      1,80 $
      10
      1,62 $
      16,20 $
      100
      1,30 $
      130,00 $
      500
      1,07 $
      535,00 $
      1000
      0,89 $
      889,00 $
      2000
      0,82 $
      1 634,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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