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SCT10N120

SCT10N120
Mfr. #:
SCT10N120
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 1.2KV TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT10N120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT10N120 Mehr Informationen SCT10N120 Product Details
Produkteigenschaft
Attributwert
Tags
SCT10, SCT1, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
***ical
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
***et
Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube
***i-Key
MOSFET N-CH 1.2KV TO247-3
***ronik
SiC-N 1200V 12A 690mOhm HiP247
***ark
Mosfet, N-Ch, 1.2Kv, 12A, 150W, Hip247; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:150W; Transistor Case Style:HiP247; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, CA-N, 1,2KV, 12A, 150W, HIP247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.5ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:HiP247; No. di Pin:3Pin; Temperatura di Esercizio Max:200°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Teil # Mfg. Beschreibung Aktie Preis
SCT10N120
DISTI # V99:2348_17630036		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
RoHS: Compliant		482
  • 1000:$6.8350
  • 500:$7.4480
  • 250:$7.6380
  • 100:$8.3110
  • 25:$9.4770
  • 10:$9.8920
  • 1:$10.7400
SCT10N120
DISTI # V36:1790_16518943		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
RoHS: Compliant		0
    SCT10N120
    DISTI # 497-16597-5-ND    		STMicroelectronicsMOSFET N-CH 1.2KV TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		243In Stock
    • 600:$7.8257
    • 100:$8.7971
    • 25:$9.9844
    • 10:$10.4160
    • 1:$11.3300
    SCT10N120
    DISTI # 25948587    		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
    RoHS: Compliant    		482
    • 1:$10.7400
    SCT10N120
    DISTI # SCT10N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube (Alt: SCT10N120)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 94
    • 1000:€6.1900
    • 500:€6.5900
    • 100:€6.8900
    • 50:€7.1900
    • 25:€7.3900
    • 10:€7.7900
    • 1:€8.4900
    SCT10N120
    DISTI # SCT10N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube - Bulk (Alt: SCT10N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Bulk    		Americas - 0
    • 6000:$6.4900
    • 3000:$6.6900
    • 1800:$6.9900
    • 1200:$7.2900
    • 600:$7.6900
    SCT10N120H
    DISTI # SCT10N120H    		STMicroelectronics- Tape and Reel (Alt: SCT10N120H)
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$5.4900
    • 6000:$5.6900
    • 4000:$5.8900
    • 2000:$6.1900
    • 1000:$6.4900
    SCT10N120
    DISTI # 97Y9494    		STMicroelectronicsPTD WBG & POWER RF0
    • 1:$6.4300
    SCT10N120H
    DISTI # 59AC7246    		STMicroelectronicsPTD WBG & POWER RF0
    • 1:$5.4800
    SCT10N120
    DISTI # 511-SCT10N120    		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    RoHS: Compliant    		328
    • 1:$10.7900
    • 10:$9.9300
    • 25:$9.5100
    • 100:$8.3800
    • 250:$7.9700
    • 500:$7.4600
    • 1000:$6.8400
    SCT10N120H
    DISTI # 511-SCT10N120H    		STMicroelectronicsMOSFET0
    • 1000:$5.9200
    SCT10N120
    DISTI # TMOSP12812    		STMicroelectronicsSiC-N 1200V 12A 690mOhm HiP247
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$7.8800
    SCT10N120
    DISTI # 3129687    		STMicroelectronicsMOSFET, N-CH, 1.2KV, 12A, 150W, HIP247
    RoHS: Compliant    		0
    • 250:$9.1200
    • 100:$10.5800
    • 50:$11.2400
    • 10:$11.8200
    • 5:$13.5200
    • 1:$14.3600
    SCT10N120
    DISTI # 3129687    		STMicroelectronicsMOSFET, N-CH, 1.2KV, 12A, 150W, HIP247600
    • 100:£6.2700
    • 50:£6.7000
    • 10:£7.1200
    • 5:£8.0700
    • 1:£8.6000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von SCT10N120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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