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BSC600N25NS3GATMA1

BSC600N25NS3GATMA1
Mfr. #:
BSC600N25NS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC600N25NS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
BSC600N25NS3 BSC6N25NS3GXT G SP000676402
Tags
BSC600N25NS3G, BSC600N25NS3, BSC600N, BSC60, BSC6, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 25 A, 250 V, 0.05 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 250 V 60 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 250V 25A Automotive 8-Pin TDSON EP T/R
***ment14 APAC
MOSFET, N CH, 250V, 25A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:250V; On Resistance
***ineon
Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***nell
MOSFET, N CH, 250V, 25A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
***ure Electronics
N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 30A D2PAK
***ark
N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes
***p One Stop
Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:250V; On Resistance
***ineon
Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***nell
MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 136W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
***i-Key
BUZ30 - SIPMOS POWER TRANSISTOR
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
***ure Electronics
Single N-Channel 200 V 0.051 Ohm 48 nC HEXFET® Power Mosfet - DirectFET®
***ineon
Target Applications: Battery Operated Drive; Class D Audio; Load Switch High Side
***ernational Rectifier
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***icroelectronics
N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
***ical
Trans MOSFET N-CH 200V 30A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 65 nC 150 W Silicon SMT Mosfet - TO-263-3
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK
***ure Electronics
FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 200V 31A 3-Pin (2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:D2-PAK; Power Dissipation Pd:180W; Power Dissipation on 1 Sq. PCB:3.13W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4342
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.3900
  • 10000:$1.3900
  • 20000:$1.2900
  • 30000:$1.2900
  • 50000:$1.1900
BSC600N25NS3GATMA1
DISTI # SP000676402		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: SP000676402)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€1.6900
  • 10000:€1.3900
  • 20000:€1.2900
  • 30000:€1.1900
  • 50000:€1.0900
BSC600N25NS3GATMA1
DISTI # 79X1338		Infineon Technologies AGMOSFET, N-CH, 250V, 25A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$2.8300
  • 10:$2.4000
  • 25:$2.2900
  • 50:$2.1900
  • 100:$2.0800
  • 250:$1.9800
  • 500:$1.7800
  • 1000:$1.5000
BSC600N25NS3 G
DISTI # 726-BSC600N25NS3GXT		Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
RoHS: Compliant		99
  • 1:$2.8300
  • 10:$2.4000
  • 100:$2.0800
  • 250:$1.9800
  • 500:$1.7800
  • 1000:$1.5000
  • 2500:$1.4200
  • 5000:$1.3700
BSC600N25NS3GATMA1
DISTI # 726-BSC600N25NS3GATM		Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.7000
  • 10:$2.3000
  • 100:$1.9900
  • 250:$1.8900
  • 500:$1.7000
  • 1000:$1.4300
  • 2500:$1.3600
BSC600N25NS3GATMA1
DISTI # 9064303P		Infineon Technologies AGMOSFET N-CH 250V 25A OPTIMOS TDSON8 EP, RL20
  • 25:£1.8320
  • 125:£1.4700
  • 250:£1.3760
  • 625:£1.2840
BSC600N25NS3GATMA1
DISTI # 2432713		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
RoHS: Compliant		0
  • 1:$4.4800
  • 10:$3.8100
  • 100:$3.2900
BSC600N25NS3GATMA1
DISTI # 2432713RL		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
RoHS: Compliant		0
  • 1:$4.4800
  • 10:$3.8100
  • 100:$3.2900
BSC600N25NS3GATMA1
DISTI # 2432713		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
RoHS: Compliant		0
  • 1:£2.3700
  • 10:£1.8600
  • 100:£1.5000
  • 250:£1.4100
  • 500:£1.3100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von BSC600N25NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,69 $
2,69 $
10
2,29 $
22,90 $
100
1,98 $
198,00 $
250
1,88 $
470,00 $
500
1,69 $
845,00 $
1000
1,42 $
1 420,00 $
2500
1,35 $
3 375,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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