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2SK2838(Q)

2SK2838(Q)
Mfr. #:
2SK2838(Q)
Hersteller:
Toshiba America Electronic Components
Beschreibung:
Trans MOSFET N-CH Si 400V 5.5A 3-Pin(3+Tab) TO-220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SK2838(Q) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SK283, 2SK28, 2SK2, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH Si 400V 5.5A 3-Pin(3+Tab) TO-220
***icroelectronics
N-Channel 400V - 0.85 Ohm - 5.4A TO-220 Zener-Protected SuperMESH(TM) POWER MOSFET
***va Crawler
N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package
***ical
Trans MOSFET N-CH 400V 5.4A 3-Pin(3+Tab) TO-220AB Tube
***eco
MOSFET N-Channel 400V 5.4A (Tc) 70W (Tc) Through Hole TO-220AB
***ark
N CHANNEL MOSFET, 400V, 5.4A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ponent Stockers USA
4 A 400 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 7
***ical
Trans MOSFET N-CH 500V 7.1A 3-Pin(3+Tab) TO-220 Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.47ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
***icroelectronics
N-channel 500 V, 0.53 Ohm, 7 A TO-220 MDmesh(TM) II Power MOSFET
***r Electronics
Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 500V, 7A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***emi
N-Channel Power MOSFET, UniFETTM, 400V, 26A, 160mΩ, TO-220
***et Europe
Trans MOSFET N-CH 400V 26A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 400 V 160 mOhm Flange Mount Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 400V, 26A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:265W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ark
MOSFET, N CH, 400V, 0.24OHM, 15A, TO-220-3; Transistor Polarity:N Channel; Conti
***emi
N-Channel Power MOSFET, UniFETTM, 400V, 15A, 300mΩ, TO-220
***Yang
Trans MOSFET N-CH 400V 15A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 400V, 15A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:170W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
2SK2838(Q)Toshiba America Electronic Components 72
  • 36:$1.8920
  • 11:$2.1500
  • 1:$3.4400
Bild Teil # Beschreibung
2SK2839(TE16L)

Mfr.#: 2SK2839(TE16L)

OMO.#: OMO-2SK2839-TE16L--1190

 N/A (ship within 1day)
2SK2806

Mfr.#: 2SK2806

OMO.#: OMO-2SK2806-1190

 Neu und Original
2SK2806-01,2SK2806,K2806

Mfr.#: 2SK2806-01,2SK2806,K2806

OMO.#: OMO-2SK2806-01-2SK2806-K2806-1190

 Neu und Original
2SK2824

Mfr.#: 2SK2824

OMO.#: OMO-2SK2824-1190

 Neu und Original
2SK2835

Mfr.#: 2SK2835

OMO.#: OMO-2SK2835-1190

 Neu und Original
2SK2862 Q

Mfr.#: 2SK2862 Q

OMO.#: OMO-2SK2862-Q-1190

 Neu und Original
2SK2866

Mfr.#: 2SK2866

OMO.#: OMO-2SK2866-1190

 POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
2SK2876,K2876

Mfr.#: 2SK2876,K2876

OMO.#: OMO-2SK2876-K2876-1190

 Neu und Original
2SK2876-01MR,K2876,2SK28

Mfr.#: 2SK2876-01MR,K2876,2SK28

OMO.#: OMO-2SK2876-01MR-K2876-2SK28-1190

 Neu und Original
2SK2883(TE24L,Q)-ND

Mfr.#: 2SK2883(TE24L,Q)-ND

OMO.#: OMO-2SK2883-TE24L-Q--ND-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von 2SK2838(Q) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,10 $
3,10 $
10
2,95 $
29,47 $
100
2,79 $
279,18 $
500
2,64 $
1 318,35 $
1000
2,48 $
2 481,60 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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