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BSB012N03LX3GXUMA1

BSB012N03LX3GXUMA1
Mfr. #:
BSB012N03LX3GXUMA1
Hersteller:
Rochester Electronics, LLC
Beschreibung:
- Bulk (Alt: BSB012N03LX3GXUMA1)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSB012N03LX3GXUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BSB012N03LX3G, BSB012N0, BSB012, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 39A 7-Pin WDSON
***i-Key
N-CHANNEL POWER MOSFET
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***Yang
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R - Tape and Reel
***ark
Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); 100% Rg tested; Compatible with Existing Surface Mount Techniques; Very Low Gate Charge; Low Junction to PCB Thermal Resistance; Fully Characterized Avalanche Voltage and Current; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***et
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R
***ment14 APAC
MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
*** Source Electronics
MOSFET P-CH 40V 50A DPAK / Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK
***roFlash
Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P CH, -40V, -50A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 73.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Operating Temperature Min: -55°C
***ure Electronics
Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS™ Power Mosfet - TO-252-3
***ment14 APAC
MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:60V; On Resistance
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, TO-252-3, RoHS
***nell
MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PQFN 5X6 8L, RoHS
***ure Electronics
IRFH9310 Series 30 V 21 A 4.6 mOhm 3.1 W 110 nC P-Channel MOSFET - PQFN-8
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: P Variants: Enhancement mode Power dissipation: 3.1 W
***nell
MOSFET,P CH,DIODE,30V,21A,PQFN56; Transistor Polarity:P Channel; Continuous Drain Current Id:-21A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):3700µohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (19-Dec-2011); Current Id Max:-21A; Power Dissipation Pd:3.1W; Voltage Vgs Max:-20V
***emi
N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
***ure Electronics
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
***rchild Semiconductor
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
Teil # Mfg. Beschreibung Aktie Preis
BSB012N03LX3 G
DISTI # BSB012N03LX3GTR-ND		Infineon Technologies AGMOSFET N-CH 30V 180A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSB012N03LX3GXUMA1
    DISTI # BSB012N03LX3GXUMA1    		Infineon Technologies AG- Bulk (Alt: BSB012N03LX3GXUMA1)
    RoHS: Compliant
    Min Qty: 334
    Container: Bulk    		Americas - 0
    • 3340:$0.9519
    • 1670:$0.9699
    • 1002:$1.0039
    • 668:$1.0409
    • 334:$1.0799
    BSB012N03LX3 G
    DISTI # 726-BS726-B012N03LX3    		Infineon Technologies AGMOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3
    RoHS: Compliant    		0
      BSB012N03LX3GXUMA1Infineon Technologies AGPower Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		5000
      • 1000:$0.9900
      • 500:$1.0400
      • 100:$1.0800
      • 25:$1.1300
      • 1:$1.2200
      Bild Teil # Beschreibung
      BSB012N03LX3 G

      Mfr.#: BSB012N03LX3 G

      OMO.#: OMO-BSB012N03LX3-G

      		 MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3
      BSB012N03LX3

      Mfr.#: BSB012N03LX3

      OMO.#: OMO-BSB012N03LX3-1190

      		 - Bulk (Alt: BSB012N03LX3)
      BSB012N03LX3G

      Mfr.#: BSB012N03LX3G

      OMO.#: OMO-BSB012N03LX3G-1190

      		 Trans MOSFET N-CH 30V 39A 7-Pin WDSON - Bulk (Alt: BSB012N03LX3G)
      BSB012N03LX3GXUMA1

      Mfr.#: BSB012N03LX3GXUMA1

      OMO.#: OMO-BSB012N03LX3GXUMA1-1190

      		 - Bulk (Alt: BSB012N03LX3GXUMA1)
      BSB012N03LX3 G

      Mfr.#: BSB012N03LX3 G

      OMO.#: OMO-BSB012N03LX3-G-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von BSB012N03LX3GXUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,48 $
      1,48 $
      10
      1,41 $
      14,11 $
      100
      1,34 $
      133,65 $
      500
      1,26 $
      631,15 $
      1000
      1,19 $
      1 188,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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