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DMN10H100SK3-13

DMN10H100SK3-13
Mfr. #:
DMN10H100SK3-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 100V N-Ch Enh FET 100mOhm 3V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN10H100SK3-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN10H100SK3-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
25.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
37 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN10
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
7.3 ns
Produktart:
MOSFET
Anstiegszeit:
5.9 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
5.4 ns
Gewichtseinheit:
0.139332 oz
Tags
DMN10H1, DMN10H, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, 100V, 18A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H100SK3-13
***ical
Trans MOSFET N-CH 100V 18A 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***ment14 APAC
MOSFET, N-CH, 100V, 18A, TO-252;
***icontronic
Power Field-Effect Transistor, 14A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***et
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
***ark
Mosfet, N-Ch, 100V, 17A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H099SK3-13
***ical
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
***ure Electronics
Single N-Channel 100 V 78 mOhm 8 nC OptiMOS™ Power Mosfet - TO-252-3
***icontronic
Power Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***ment14 APAC
MOSFET, N CH, 13A, 100V, PG-TO252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):59mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:13A; Power Dissipation Pd:31W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***i-Key
MOSFET N-CH 80V 19.6A DPAK
***ser
MOSFETs 80V N-Channel QFET
***ponent Stockers USA
20 A 100 V 0.055 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***ser
MOSFETs 20a, 100V, 0.054 Ohm Logic Level N-Ch
***Yang
PWR MOS ULTRAFET 100V/20A/0.055 OHMS N-CH LL TO-252AA - Bulk
***ponent Stockers USA
18 A 100 V 0.089 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***ser
MOSFETs 18a, 100V, 0.087 Ohm Logic Level N-Ch
***i-Key Marketplace
MOSFET N-CH 100V 18A TO252AA
***ponent Stockers USA
18 A 100 V 0.089 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***Yang
MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch - Bulk
***SIT Distribution GmbH
Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Teil # Mfg. Beschreibung Aktie Preis
DMN10H100SK3-13
DISTI # DMN10H100SK3-13DICT-ND		Diodes IncorporatedMOSFET N-CH 100V 18A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4556In Stock
  • 1000:$0.3444
  • 500:$0.4305
  • 100:$0.5812
  • 10:$0.7530
  • 1:$0.8600
DMN10H100SK3-13
DISTI # DMN10H100SK3-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 100V 18A TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4556In Stock
  • 1000:$0.3444
  • 500:$0.4305
  • 100:$0.5812
  • 10:$0.7530
  • 1:$0.8600
DMN10H100SK3-13
DISTI # DMN10H100SK3-13DITR-ND		Diodes IncorporatedMOSFET N-CH 100V 18A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3030
DMN10H100SK3-13
DISTI # DMN10H100SK3-13		Diodes IncorporatedMOSFET BVDSS: 61V~100V TO252 T&R 2.5K - Tape and Reel (Alt: DMN10H100SK3-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2329
  • 5000:$0.2219
  • 10000:$0.2119
  • 15000:$0.2019
  • 25000:$0.1969
DMN10H100SK3-13
DISTI # 621-DMN10H100SK3-13		Diodes IncorporatedMOSFET 100V N-Ch Enh FET 100mOhm 3V
RoHS: Compliant		8771
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
DMN10H100SK3-13Diodes IncorporatedMOSFET N-CH 100V 18A TO252 (DMN10H100SK3-13)4605
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1991
    Menge eingeben:
    Der aktuelle Preis von DMN10H100SK3-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,71 $
    0,71 $
    10
    0,59 $
    5,89 $
    100
    0,38 $
    38,00 $
    1000
    0,30 $
    304,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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