BSS138N H6433

Mfr. #:: BSS138N H6433
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 60V 230mA SOT-23-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSS138N H6433 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 230 mA

Rds On - Drain-Source-Widerstand:: 2.2 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 600 mV

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 1.4 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 360 mW

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 1.1 mm

Länge:: 2.9 mm

Serie:: BSS138

Transistortyp:: 1 N-Channel

Breite:: 1.3 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 100 mS

Abfallzeit:: 8.2 ns

Produktart:: MOSFET

Anstiegszeit:: 3 ns

Werkspackungsmenge:: 10000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 6.7 ns

Typische Einschaltverzögerungszeit:: 2.3 ns

Teil # Aliase:: BSS138NH6433XT BSS138NH6433XTMA1 SP000924060

Gewichtseinheit:: 0.000282 oz

Tags: BSS138NH64, BSS138NH, BSS138N, BSS138, BSS13, BSS1, BSS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSS138N H6433 Beschreibung

***p One Stop: Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R

***ronik: N-CH 60V 0,23A 3500mOhm SOT-23

***el Electronic: Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

*** Source Electronics: Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3

***ure Electronics: N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3

***el Electronic: Dual Single Supply Operational Amplifier 8-TSSOP 0 to 70

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ser: MOSFETs - Low Threshold Voltage N-Channel

***ure Electronics: BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3

***ical: Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R

***ark: MOSFET, P-CH, 60V, 0.17A, 150DEG C/0.36W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:170mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

***emi: N-Channel Power MOSFET, Logic Level, 50V, 200mA, 3.5Ω

***ure Electronics: N-Channel 50 V 3.5 O 2.4 nC Logic Level Enhancement Mode Mosfet - SOT-23

***et Europe: Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R

***roFlash: Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CHANNEL, 50V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2.78ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.25V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, lowcurrent applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 200 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 350

***emi: Power MOSFET 170 mA, 100 V, N-Channel SOT-23

***ure Electronics: N-Channel 100 V 6 O 2.5 nC Logic Level Enhancement Mode Mosfet - SOT-23

***et Europe: Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

***r Electronics: Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CHANNEL, 100V, 0.17A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 2.98ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.405V; Power Dissipation Pd: 360mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speedline drivers, power management/power supply and switching applications.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360

***emi: Single P−Channel Power MOSFET -60V, -211mA, 5Ω -60 V, -211 mA, Single P-Channel SOT-23 Package

***Yang: Trans MOSFET P-CH 60V 0.211A 3-Pin SOT-23 T/R - Tape and Reel

***ark: MOSFET, P-CH, 60V, 0.196A, 150DEG C; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:196mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Small Signal Field-Effect Transistor, 0.196A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***nell: MOSFET, P-CH, -60V, -0.196A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -196mA; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 347mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R

***el Electronic: Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

***ronik: P-CH MOS-FET 0,17A 60V SOT23

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSS138NH6433XTMA1 DISTI # V72:2272_06391503	Infineon Technologies AG	Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	4326	3000:$0.0542 1000:$0.0667 500:$0.0746 250:$0.0829 100:$0.0922 25:$0.1932 10:$0.2147 1:$0.3325
BSS138NH6433XTMA1 DISTI # V36:1790_06391503	Infineon Technologies AG	Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	0	10000000:$0.0420 5000000:$0.0421 1000000:$0.0476 100000:$0.0583 10000:$0.0601
BSS138NH6433XTMA1 DISTI # BSS138NH6433XTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 230MA SOT23 Min Qty: 1 Container: Cut Tape (CT)	26195In Stock	1000:$0.0720 500:$0.0939 100:$0.1418 10:$0.2500 1:$0.3400
BSS138NH6433XTMA1 DISTI # BSS138NH6433XTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 230MA SOT23 Min Qty: 1 Container: Digi-Reel®	26195In Stock	1000:$0.0720 500:$0.0939 100:$0.1418 10:$0.2500 1:$0.3400
BSS138NH6433XTMA1 DISTI # BSS138NH6433XTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 230MA SOT23 Min Qty: 10000 Container: Tape & Reel (TR)	20000In Stock	50000:$0.0416 30000:$0.0469 10000:$0.0501
BSS138N H6433 DISTI # 30577874	Infineon Technologies AG	Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R RoHS: Compliant	6669	1000:$0.0680 500:$0.0857 200:$0.0936 107:$0.1007
BSS138NH6433XTMA1 DISTI # 31339284	Infineon Technologies AG	Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	4326	3000:$0.0542 1000:$0.0667 500:$0.0746 250:$0.0829 201:$0.0922
BSS138NH6433XTMA1 DISTI # SP000924060	Infineon Technologies AG	Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R (Alt: SP000924060) Min Qty: 10000 Container: Tape and Reel	Europe - 370000	100000:€0.0351 60000:€0.0490 40000:€0.0612 20000:€0.0734 10000:€0.0816
BSS138NH6433XTMA1 DISTI # BSS138NH6433XTMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS138NH6433XTMA1) RoHS: Compliant Min Qty: 10000 Container: Reel	Americas - 0	20000:$0.0263 40000:$0.0263 60000:$0.0263 100000:$0.0263 10000:$0.0417
BSS138NH6433XTMA1 DISTI # 68AC4426	Infineon Technologies AG	MOSFET, N-CH, 60V, 0.23A, SOT-23-3,Transistor Polarity:N Channel,Continuous Drain Current Id:230mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):2.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes RoHS: Compliant	0	1000:$0.0750 500:$0.0820 250:$0.0900 100:$0.0970 50:$0.1400 25:$0.1830 10:$0.2260 1:$0.3500
BSS138N H6433 DISTI # 726-BSS138NH6433	Infineon Technologies AG	MOSFET N-Ch 60V 230mA SOT-23-3 RoHS: Compliant	86332	1:$0.3500 10:$0.2260 100:$0.0970 1000:$0.0750 2500:$0.0570 10000:$0.0510 20000:$0.0470
BSS138N H6327 DISTI # 726-BSS138NH6327	Infineon Technologies AG	MOSFET N-Ch 60V 230mA SOT-23-3 RoHS: Compliant	518603	1:$0.3500 10:$0.2260 100:$0.0970 1000:$0.0750 3000:$0.0570 9000:$0.0510 24000:$0.0470
BSS138NH6433XTMA1 DISTI # 726-BSS138NH6433XTMA	Infineon Technologies AG	MOSFET N-Ch 60V 230mA SOT-23-3 RoHS: Compliant	63456	1:$0.3500 10:$0.2260 100:$0.0970 1000:$0.0750 2500:$0.0570 10000:$0.0510 20000:$0.0470
BSS138NH6433XTMA1 DISTI # 8269285	Infineon Technologies AG	On a Reel of 500, BSS138NH6433XTMA1 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon, RL Min Qty: 500 Container: Reel	71500	500:$0.1030 1000:$0.0690 2500:$0.0550 5000:$0.0490 10000:$0.0450
BSS138NH6433XTMA1 DISTI # 1787507	Infineon Technologies AG	On a Reel of 10000, BSS138NH6433XTMA1 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon, RL Min Qty: 10000 Container: Reel	0	10000:$0.0510
BSS138NH6433XTMA1 DISTI # 2480644	Infineon Technologies AG	MOSFET, N-CH, 60V, 0.23A, SOT-23-3 RoHS: Compliant	9330	20000:$0.0710 10000:$0.0770 2500:$0.0860 1000:$0.1130 100:$0.1460 10:$0.3410 1:$0.5270
BSS138NH6433XTMA1 DISTI # 2480644RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 0.23A, SOT-23-3 RoHS: Compliant	0	5000:£0.0393 1000:£0.0480 500:£0.0644 250:£0.0808 100:£0.0869 25:£0.2080 5:£0.2140
BSS138NH6433XTMA1 DISTI # 2480644	Infineon Technologies AG	MOSFET, N-CH, 60V, 0.23A, SOT-23-3 RoHS: Compliant	9325	5000:£0.0393 1000:£0.0480 500:£0.0644 250:£0.0808 100:£0.0869 25:£0.2080 5:£0.2140
BSS138NH6433XTMA1 DISTI # XSKDRABV0051762	Infineon Technologies AG	RoHS: Compliant	180000 in Stock0 on Order	180000:$0.0427 20000:$0.0457
BSS138N H6433 DISTI # TMOS1298	Infineon Technologies AG	N-CH 60V 0,23A 3500mOhm SOT-23 RoHS: Compliant	Stock DE - 20000Stock HK - 0Stock US - 0	10000:$0.0430 20000:$0.0406 40000:$0.0381 60000:$0.0344 100000:$0.0332

Verwandte Produkte

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	Mfr.#: SN65HVD234D OMO.#: OMO-SN65HVD234D-TEXAS-INSTRUMENTS	CAN Interface IC SLEEP MODE
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Verfügbarkeit

Aktie:: 86
Auf Bestellung:: 2069
Menge eingeben:

Der aktuelle Preis von BSS138N H6433 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,35 $~~; ~~0,35 $~~

10: ~~0,23 $~~; ~~2,26 $~~

100: ~~0,10 $~~; ~~9,70 $~~

1000: ~~0,08 $~~; ~~75,00 $~~

2500: ~~0,06 $~~; ~~142,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSS138N H6433

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes