CSD75208W1015T

Mfr. #:: CSD75208W1015T
Beschreibung:: MOSFET 20V PCH NexFET Pwr MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD75208W1015T Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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Mehr Informationen:: CSD75208W1015T Mehr Informationen CSD75208W1015T Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DSBGA-6

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 1.6 A

Rds On - Drain-Source-Widerstand:: 150 mOhms, 285 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 800 mV

Vgs - Gate-Source-Spannung:: 6 V

Qg - Gate-Ladung:: 1.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 750 mW (3/4 W)

Aufbau:: Dual

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 0.625 mm

Länge:: 1.5 mm

Serie:: CSD75208W1015

Transistortyp:: 2 P-Channel

Breite:: 1 mm

Marke:: Texas Instruments

Abfallzeit:: 11 ns

Produktart:: MOSFET

Anstiegszeit:: 5 ns

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 29 ns

Typische Einschaltverzögerungszeit:: 9 ns

Gewichtseinheit:: 0.000060 oz

Tags: CSD7520, CSD752, CSD75, CSD7, CSD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD75208W1015T Beschreibung

***et: Transistor MOSFET Array Dual P-CH 20V 1.6A 6-Pin DSBGA T/R

***as Instruments: -20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot 6-DSBGA -55 to 150

***el Electronic: TEXAS INSTRUMENTS CSD75208W1015TDual MOSFET, Dual P Channel, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

*** Stop Electro: Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6; Polarité transistor: Double canal P; Courant de drain Id: -1.6A; Tension Vds max..: -20V; Résistance Rds(on): 0.056ohm; Tension, mesure Rds: -4.5V; Tension de seuil Vgs: -800mV; Dissipa

***emi: N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ

***ure Electronics: N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3

***-Wing Technology: ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount

***enic: 20V 1.7A 500mW 70m¦¸@4.5V,1.7A 1.5V@250¦ÌA N Channel SOT-23-3 MOSFETs ROHS

***nell: MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Powe

***rchild Semiconductor: This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***emi: N-Channel PowerTrench® MOSFET, 1.8 Vgs Specified, 20V, 2A, 70mΩ

***eco: Transistor MOSFET Negative Channel 20 Volt 2A 3-Pin SuperSOT T/R

***Yang: Trans MOSFET N-CH 20V 2A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled

***ure Electronics: N-Channel 20V 70 mOhm 1.8 V Specified PowerTrench Mosfet - SSOT-3

***enic: 20V 2A 500mW 70m´Î@4.5V2A 1.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***nell: MOSFET, N-CH, 20V, 2A, 3-SSOT, RL; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; P

***rchild Semiconductor: This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

***el Electronic: Embedded - Microcontrollers 1 (Unlimited) 128-LQFP 76 7K x 8 Internal DMA, LCD, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit MCU 16-bit 78K0R CISC 128KB Flash 3.3V/5V 128-Pin LQFP

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***p One Stop: Trans MOSFET N/P-CH 20V 2.7A/1.9A 6-Pin SuperSOT T/R

***emi: Dual N & P-Channel PowerTrench® MOSFET, 2.5V Specified

***-Wing Technology: ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount

*** Stop Electro: Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***rchild Semiconductor: These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

***nell: MOSFET, DUAL NP SUPERSOT-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 960mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Cont Current Id N Channel 2: 2.7A; Cont Current Id P Channel: 1.6A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 2; On State Resistance N Channel Max: 80mohm; On State Resistance P Channel Max: 170mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 8A; SMD Marking: FDC6327C; Termination Type: Surface Mount Device; Voltage Vds: 20V; Voltage Vgs th Max: 1.5V; Voltage Vgs th P Channel Max: 1.5V

***ark: MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous

***el Electronic: VISHAY SI1427EDH-T1-GE3 MOSFET Transistor, P Channel, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV

***nell: MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C

***et Japan: Transistor MOSFET Array Dual P-CH 20V 2A 6-Pin SOT-26 T/R

***ure Electronics: Dual P-Channel 20 V 150 mOhm Enhancement Mode Field Effect Transistor

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGS

***(Formerly Allied Electronics): MOSFET P-Channel 20V 2A SOT26 | Diodes Inc DMP2240UDM-7

***roFlash: Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, AEC-Q101, DUAL P-CH, -20V, SOT26; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 600mW; Transistor Case Style: SOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ser: MOSFETs - Low Threshold Voltage Dual P-Channel

***ronik: P+P DUAL-CHAN.-FET 20V 2A SOT26

***ure Electronics: DMP2104V Series P-Channel 20 V 150 mOhm MosFet Surface Mount - SOT-563-6

***ical: Trans MOSFET P-CH 20V 1.9A Automotive 6-Pin SOT-563 T/R

***ark: Mosfet, P Channel, -20V, -860Ma, Sot-563; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:860Ma; On Resistance Rds(On):0.15Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5Vrohs Compliant: Yes |Diodes Inc. DMP2104V-7

***nell: MOSFET P-CHANNEL SOT-563; Transistor Polarity: P Channel; Continuous Drain Current Id: -950mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 170mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -860mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: -4.5V

***AS INSRUMENTS: This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

CSD75208W1015T Mehr Informationen

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD75208W1015T DISTI # 31713930	Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R RoHS: Compliant	10000	1250:$0.2581 750:$0.2877 500:$0.3319 250:$0.3909
CSD75208W1015T DISTI # 296-38340-1-ND	MOSFET 2P-CH 20V 1.6A 6WLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8732In Stock	100:$0.4144 10:$0.5370 1:$0.6100
CSD75208W1015T DISTI # 296-38340-6-ND	MOSFET 2P-CH 20V 1.6A 6WLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8732In Stock	100:$0.4144 10:$0.5370 1:$0.6100
CSD75208W1015T DISTI # 296-38340-2-ND	MOSFET 2P-CH 20V 1.6A 6WLP RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	8500In Stock	1250:$0.2533 750:$0.2831 500:$0.3278 250:$0.3874
CSD75208W1015T DISTI # V39:1801_07248898	Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R RoHS: Compliant	0
CSD75208W1015T DISTI # CSD75208W1015T	Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD75208W1015T) RoHS: Compliant Min Qty: 1750 Container: Reel	Americas - 0	17500:$0.1859 8750:$0.1919 5250:$0.1979 3500:$0.2049 1750:$0.2159
CSD75208W1015T	-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm	1000	1000:$0.1700 750:$0.1900 500:$0.2400 250:$0.2900 100:$0.3100 25:$0.3700 10:$0.4000 1:$0.4500
CSD75208W1015T DISTI # 595-CSD75208W1015T	MOSFET 20V PCH NexFET Pwr MOSFET RoHS: Compliant	9239	1:$0.6500 10:$0.5400 100:$0.3280 250:$0.3280 1000:$0.2540 2500:$0.2170 10000:$0.2020 25000:$0.1910
CSD75208W1015 DISTI # 595-CSD75208W1015	MOSFET 20V P-channel NexFET Pwr MOSFET RoHS: Compliant	13062	1:$0.5600 10:$0.4700 100:$0.2840 1000:$0.2200 3000:$0.1880 9000:$0.1750 24000:$0.1660 45000:$0.1620
CSD75208W1015T . DISTI # 2447875RL	MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6 RoHS: Compliant	0	100:$0.6330 10:$0.8200 1:$0.9290
CSD75208W1015T . DISTI # 2447875	MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6 RoHS: Compliant	0	100:$0.6330 10:$0.8200 1:$0.9290

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von CSD75208W1015T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,65 $~~; ~~0,65 $~~

10: ~~0,54 $~~; ~~5,40 $~~

100: ~~0,33 $~~; ~~32,80 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD75208W1015T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes