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IRFS3207TRLPBF

IRFS3207TRLPBF
Mfr. #:
IRFS3207TRLPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS3207TRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3207TRLPBF DatasheetIRFS3207TRLPBF Datasheet (P4-P6)IRFS3207TRLPBF Datasheet (P7-P9)IRFS3207TRLPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
3.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
180 nC
Pd - Verlustleistung:
330 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001578312
Gewichtseinheit:
0.139332 oz
Tags
IRFS3207, IRFS32, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFS3207PBF N-channel MOSFET Transistor; 180 A; 75 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 75 V 4.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ical
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK Tube
***roFlash
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
N CHANNEL MOSFET, 75V, 180A, D2-PAK; Tra; N CHANNEL MOSFET, 75V, 180A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***nell
MOSFET, N-CH, 75V, 170A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 75 V 4.5 mOhm 270 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 75V,RDS(ON) 3.5 Milliohms,ID 75A,D2Pak,PD 300W,VGS+/-20V
***nell
MOSFET, N-CH, 75V, 170A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 75V 180A Automotive 7-Pin(6+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***(Formerly Allied Electronics)
MOSFET N-Channel 75V 180A HEXFET D2PAK-7
***el Electronic
Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7
***ment14 APAC
MOSFET,N CH,75V,180A,D2PAK7; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***icroelectronics
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package
***ark
Mosfet Transistor, N Channel, 60 A, 75 V, 3.5 Mohm, 10 V, 4 V
***ure Electronics
N-Channel 75 V 3.7 mO Surface Mount STripFET™ Power MosFet - D2PAK
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET
***roFlash
Mosfet Transistor, N Channel, 70 A, 75 V, 6.5 Mohm, 10 V, 4 V
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 75 V 0.0075 O 160 nC Surface Mount STripFET™II MosFet - D2PAK
***(Formerly Allied Electronics)
MOSFET N-Ch 75V 120A UltraFET III D2PAK
***ark
MOSFET, N CH, 75V, 120A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***nell
MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
***ical
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFS3207TRLPBF
DISTI # V72:2272_13891539		Infineon Technologies AGTrans MOSFET N-CH 75V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		344
  • 250:$1.6587
  • 100:$1.7438
  • 25:$1.9713
  • 10:$1.9939
  • 1:$2.2730
IRFS3207TRLPBF
DISTI # IRFS3207TRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 75V 170A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1148In Stock
  • 100:$2.5387
  • 10:$3.0960
  • 1:$3.4700
IRFS3207TRLPBF
DISTI # IRFS3207TRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 75V 170A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1148In Stock
  • 100:$2.5387
  • 10:$3.0960
  • 1:$3.4700
IRFS3207TRLPBF
DISTI # IRFS3207TRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 75V 170A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 800:$1.8034
IRFS3207TRLPBF
DISTI # 26196442		Infineon Technologies AGTrans MOSFET N-CH 75V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		344
  • 250:$1.6587
  • 100:$1.7438
  • 25:$1.9713
  • 10:$1.9938
  • 6:$2.2730
IRFS3207TRLPBF
DISTI # IRFS3207TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 75V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3207TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.1900
  • 1600:$1.1900
  • 3200:$1.0900
  • 4800:$1.0900
  • 8000:$1.0900
IRFS3207TRLPBF
DISTI # IRFS3207TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 75V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS3207TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
    IRFS3207TRLPBF
    DISTI # 70019023    		Infineon Technologies AGMOSFET,75V,180A,4.5 MOHM,180 NC QG,D2-PAK
    RoHS: Compliant    		0
    • 800:$4.7500
    • 1600:$4.6550
    • 4000:$4.5130
    • 8000:$4.3230
    • 20000:$4.0380
    IRFS3207TRLPBFInfineon Technologies AGSingle N-Channel 75 V 4.5 mOhm 260 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant    		800Reel
    • 800:$1.3500
    IRFS3207TRLPBF
    DISTI # 942-IRFS3207TRLPBF    		Infineon Technologies AGMOSFET MOSFT 75V 180A 4.5mOhm 180nC
    RoHS: Compliant    		397
    • 1:$2.9000
    • 10:$2.4600
    • 100:$2.1400
    • 250:$2.0300
    • 500:$1.8200
    IRFS3207TRLPBFInternational Rectifier75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB287
    • 128:$1.3650
    • 13:$1.5750
    • 1:$3.1500
    IRFS3207TRLPBF
    DISTI # C1S322000494873    		Infineon Technologies AGTrans MOSFET N-CH 75V 180A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		344
    • 250:$1.6587
    • 100:$1.7438
    • 25:$1.9713
    • 10:$1.9939
    • 1:$2.2730
    IRFS3207TRLPBF
    DISTI # 2580024    		Infineon Technologies AGMOSFET, N-CH, 75V, 170A, TO-263AB-3
    RoHS: Compliant    		200
    • 1:£2.4900
    • 10:£1.8800
    • 100:£1.6300
    • 250:£1.5500
    • 500:£1.3600
    IRFS3207TRLPBF
    DISTI # 2580024    		Infineon Technologies AGMOSFET, N-CH, 75V, 170A, TO-263AB-3
    RoHS: Compliant    		190
    • 1:$5.5400
    • 10:$4.9400
    • 100:$4.0500
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    Verfügbarkeit
    Aktie:
    569
    Auf Bestellung:
    2552
    Menge eingeben:
    Der aktuelle Preis von IRFS3207TRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,89 $
    2,89 $
    10
    2,45 $
    24,50 $
    100
    2,13 $
    213,00 $
    250
    2,02 $
    505,00 $
    500
    1,81 $
    905,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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