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SI8808DBT2E1

SI8808DBT2E1
Mfr. #:
SI8808DBT2E1
Hersteller:
Vishay Intertechnologies
Beschreibung:
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8808DBT2E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SI8808DB-T2-E1
DISTI # V72:2272_09216536		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant		4380
  • 3000:$0.1396
  • 1000:$0.1590
  • 500:$0.2105
  • 250:$0.2332
  • 100:$0.2591
  • 50:$0.3064
  • 25:$0.3744
  • 10:$0.3815
  • 1:$0.4977
SI8808DB-T2-E1
DISTI # V36:1790_09216536		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant		0
  • 3000000:$0.1325
  • 1500000:$0.1327
  • 300000:$0.1419
  • 30000:$0.1559
  • 3000:$0.1582
SI8808DB-T2-E1
DISTI # V99:2348_09216536		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant		0
  • 3000000:$0.1425
  • 1500000:$0.1426
  • 300000:$0.1485
  • 30000:$0.1569
  • 3000:$0.1582
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		47618In Stock
  • 1000:$0.1787
  • 500:$0.2313
  • 100:$0.2944
  • 10:$0.3940
  • 1:$0.4600
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		47618In Stock
  • 1000:$0.1787
  • 500:$0.2313
  • 100:$0.2944
  • 10:$0.3940
  • 1:$0.4600
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		45000In Stock
  • 75000:$0.1293
  • 30000:$0.1306
  • 15000:$0.1378
  • 6000:$0.1480
  • 3000:$0.1582
SI8808DB-T2-E1
DISTI # 25790129		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant		4380
  • 51:$0.4977
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1246
  • 18000:$0.1281
  • 12000:$0.1317
  • 6000:$0.1373
  • 3000:$0.1415
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1169
  • 18000:€0.1259
  • 12000:€0.1369
  • 6000:€0.1589
  • 3000:€0.2329
SI8808DB-T2-E1.
DISTI # 28AC2185		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:900mW,No. of Pins:4Pins RoHS Compliant: No0
  • 30000:$0.1250
  • 18000:$0.1280
  • 12000:$0.1320
  • 6000:$0.1380
  • 1:$0.1420
SI8808DB-T2-E1
DISTI # 78-SI8808DB-T2-E1		Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant		4901
  • 1:$0.4600
  • 10:$0.3510
  • 100:$0.2610
  • 500:$0.2140
  • 1000:$0.1660
  • 3000:$0.1510
  • 6000:$0.1410
  • 9000:$0.1320
  • 24000:$0.1250
SI8808DBT2E1Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		3000
    SI8808DB-T2-E1Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		Americas -
      Bild Teil # Beschreibung
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1

      		 MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1-VISHAY

      		 MOSFET N-CH 30V MICROFOOT
      SI8808DBT2E1

      Mfr.#: SI8808DBT2E1

      OMO.#: OMO-SI8808DBT2E1-1190

      		 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von SI8808DBT2E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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