FDMS86183

FDMS86183
Mfr. #:
FDMS86183
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET PTNG 100/20V Nch Power Trench Mosfet
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS86183 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMS86183 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
51 A
Rds On - Drain-Source-Widerstand:
9.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
21 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
63 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
FDMS86183
Transistortyp:
1 N-Channel
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
20 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
11 ns
Gewichtseinheit:
0.002402 oz
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, Dual N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86183
***et Europe
N-Channel Shielded Gate PowerTrench MOSFET 100V 51A 12.8mOhm 8-Pin PQFN T/R
***ical
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET100 V, 51 A, 12.8 mΩ
***ark
PTNG 100/20V NCH POWER TRENCH MOSFET
***i-Key
PTNG 100/20V NCH POWER TRENCH MO
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMS86183
DISTI # V36:1790_17091599
ON SemiconductorN-Channel Shielded gate power Trench MOSFET0
    FDMS86183
    DISTI # FDMS86183TR-ND
    ON SemiconductorMOSFET N-CH 100V 51A 8PQFN
    RoHS: Not compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 6000:$0.5725
    • 3000:$0.6011
    FDMS86183
    DISTI # FDMS86183CT-ND
    ON SemiconductorMOSFET N-CH 100V 51A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.6633
    • 500:$0.8402
    • 100:$1.0171
    • 10:$1.3050
    • 1:$1.4600
    FDMS86183
    DISTI # FDMS86183DKR-ND
    ON SemiconductorMOSFET N-CH 100V 51A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.6633
    • 500:$0.8402
    • 100:$1.0171
    • 10:$1.3050
    • 1:$1.4600
    FDMS86183
    DISTI # FDMS86183
    ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET 100V 51A 12.8mOhm 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86183)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.5039
    • 18000:$0.5169
    • 12000:$0.5239
    • 6000:$0.5309
    • 3000:$0.5339
    FDMS86183
    DISTI # 18AC7316
    ON SemiconductorMOSFET, N-CH, 100V, 51A, POWER 56,Transistor Polarity:N Channel,Continuous Drain Current Id:51A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes0
    • 1000:$0.6200
    • 500:$0.7850
    • 250:$0.8370
    • 100:$0.8890
    • 50:$0.9800
    • 25:$1.0700
    • 10:$1.1600
    • 1:$1.3600
    FDMS86183
    DISTI # 24AC8556
    ON SemiconductorFET 100V 12.8 MOHM PQFN56 / REEL0
    • 30000:$0.5200
    • 18000:$0.5320
    • 12000:$0.5520
    • 6000:$0.6140
    • 3000:$0.6750
    • 1:$0.7040
    FDMS86183
    DISTI # 512-FDMS86183
    ON SemiconductorMOSFET PTNG 100/20V Nch Power Trench Mosfet
    RoHS: Compliant
    37
    • 1:$1.3500
    • 10:$1.1500
    • 100:$0.8800
    • 500:$0.7770
    • 1000:$0.6140
    • 3000:$0.5440
    • 9000:$0.5240
    FDMS86183
    DISTI # 2762550
    ON SemiconductorMOSFET, N-CH, 100V, 51A, POWER 560
    • 500:£0.6170
    • 250:£0.6580
    • 100:£0.6990
    • 25:£0.9090
    • 5:£1.0100
    FDMS86183
    DISTI # 2762550
    ON SemiconductorMOSFET, N-CH, 100V, 51A, POWER 56
    RoHS: Compliant
    0
    • 1000:$1.0700
    • 500:$1.3500
    • 100:$1.7400
    • 10:$2.2000
    • 1:$2.4700
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    Mfr.#: L1V2-6570000000000

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    NX3225SA-25.000M-STD-CRS-2

    Mfr.#: NX3225SA-25.000M-STD-CRS-2

    OMO.#: OMO-NX3225SA-25-000M-STD-CRS-2-NDK

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    LM358LVIDR

    Mfr.#: LM358LVIDR

    OMO.#: OMO-LM358LVIDR-TEXAS-INSTRUMENTS

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von FDMS86183 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,35 $
    1,35 $
    10
    1,15 $
    11,50 $
    100
    0,88 $
    88,00 $
    500
    0,78 $
    388,50 $
    1000
    0,61 $
    614,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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