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SI1016X-T1-GE3

SI1016X-T1-GE3
Mfr. #:
SI1016X-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET N/P-Ch MOSFET 700/1200 [email protected]
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1016X-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1016X-T1-GE3 DatasheetSI1016X-T1-GE3 Datasheet (P4-P6)SI1016X-T1-GE3 Datasheet (P7-P9)SI1016X-T1-GE3 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Id - Kontinuierlicher Drainstrom:
400 mA, 600 mA
Rds On - Drain-Source-Widerstand:
750 mOhms, 1.2 Ohms
Vgs th - Gate-Source-Schwellenspannung:
450 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
750 pC, 1500 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
280 mW, 280 mW
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI1
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
0.4 S, 1 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns, 35 ns
Typische Einschaltverzögerungszeit:
5 ns, 5 ns
Teil # Aliase:
SI1016X-GE3
Gewichtseinheit:
0.001129 oz
Tags
SI1016X-T, SI1016X, SI1016, SI101, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6
*** Source Electronics
MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, SC-89; Tra; DUAL N/P CHANNEL MOSFET, 20V, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:485mA; Continuous Drain Current Id, P Channel:-370mA; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, N & P CH, 20V, 0.485A, SOT-563; Transistor Polarity:N and P Channel; Continuous Drain Current Id:485mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:380mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C
Teil # Mfg. Beschreibung Aktie Preis
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V SC89-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		38255In Stock
  • 1000:$0.1926
  • 500:$0.2493
  • 100:$0.3399
  • 10:$0.4530
  • 1:$0.5400
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V SC89-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		38255In Stock
  • 1000:$0.1926
  • 500:$0.2493
  • 100:$0.3399
  • 10:$0.4530
  • 1:$0.5400
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V SC89-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		33000In Stock
  • 3000:$0.1705
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Cut TR (SOS) (Alt: SI1016X-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2999
  • 1:$0.4649
  • 30:$0.4389
  • 75:$0.3659
  • 150:$0.3289
  • 375:$0.2709
  • 750:$0.2049
  • 1500:$0.1859
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: SI1016X-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1449
  • 6000:$0.1409
  • 12000:$0.1349
  • 18000:$0.1309
  • 30000:$0.1279
SI1016X-T1-GE3Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel
RoHS: Compliant
Container: Reel		Americas - 0
    SI1016X-T1-GE3
    DISTI # 73W9405    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: 73W9405)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 1:$0.1500
    • 6000:$0.1450
    • 12000:$0.1360
    • 18000:$0.1330
    • 30000:$0.1290
    SI1016X-T1-GE3
    DISTI # 73W9405    		Vishay IntertechnologiesMOSFET, N AND P CHANNEL, 20V, 0.41OHM, 485mA, SOT-563, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes9000
    • 1:$0.1550
    • 3000:$0.1500
    • 6000:$0.1450
    • 12000:$0.1360
    • 18000:$0.1330
    • 30000:$0.1290
    SI1016X-T1-GE3
    DISTI # 16P3672    		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, SC-89,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 1:$0.4800
    • 25:$0.3620
    • 50:$0.3160
    • 100:$0.2690
    • 250:$0.2450
    • 500:$0.2210
    • 1000:$0.1710
    SI1016X-T1-GE3.
    DISTI # 16AC0247    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V,Power Dissipation Pd:250mW,No. of Pins:6PinsRoHS Compliant: No0
    • 1:$0.1580
    • 3000:$0.1530
    • 6000:$0.1450
    • 12000:$0.1360
    • 18000:$0.1330
    • 30000:$0.1290
    SI1016X-T1-GE3
    DISTI # 70459639    		Vishay SiliconixN/P-Ch MOSFET 700/1200 [email protected]
    RoHS: Compliant    		0
    • 3000:$0.5370
    • 6000:$0.3660
    SI1016X-T1-GE3
    DISTI # 781-SI1016X-T1-GE3    		Vishay IntertechnologiesMOSFET N/P-Ch MOSFET 700/1200 [email protected]
    RoHS: Compliant    		24855
    • 1:$0.4800
    • 10:$0.3620
    • 100:$0.2690
    • 500:$0.2210
    • 1000:$0.1710
    • 3000:$0.1550
    • 6000:$0.1450
    • 9000:$0.1360
    • 24000:$0.1290
    SI1016X-T1-GE3Vishay Siliconix485MA, 20V, 2 CHANNEL,N AND P-CHANNEL, SI, SMALL SIGNAL, MOSFET80
    • 38:$0.2025
    • 15:$0.2700
    • 1:$0.3600
    SI1016X-T1-GE3
    DISTI # XSFP00000119259    		Vishay SiliconixZener Diode, 8.2V V(Z), 5%, 0.5W,Silicon,Unidirectional
    RoHS: Compliant    		18000
    • 3000:$0.4000
    • 18000:$0.3636
    SI1016X-T1-GE3Vishay IntertechnologiesMOSFET N/P-Ch MOSFET 700/1200 [email protected]
    RoHS: Compliant    		Americas - 6000
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      Verfügbarkeit
      Aktie:
      27
      Auf Bestellung:
      2010
      Menge eingeben:
      Der aktuelle Preis von SI1016X-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
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      10
      0,36 $
      3,61 $
      100
      0,27 $
      26,80 $
      500
      0,22 $
      110,00 $
      1000
      0,17 $
      170,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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