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SIDR622DP-T1-GE3

SIDR622DP-T1-GE3
Mfr. #:
SIDR622DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR622DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR622DP-T1-GE3 DatasheetSIDR622DP-T1-GE3 Datasheet (P4-P6)SIDR622DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR622DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
64.6 A
Rds On - Drain-Source-Widerstand:
17.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
27 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
33 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
13 ns
Tags
SIDR62, SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR622DP-T1-GE3
DISTI # V72:2272_21764862		Vishay IntertechnologiesSIDR622DP-T1-GE35987
  • 3000:$1.3110
  • 1000:$1.6219
  • 500:$1.6390
  • 250:$1.8940
  • 100:$1.9130
  • 25:$2.4830
  • 10:$2.5080
  • 1:$3.3462
SIDR622DP-T1-GE3
DISTI # SIDR622DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 150V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.3797
  • 3000:$1.3969
SIDR622DP-T1-GE3
DISTI # SIDR622DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 150V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.4922
  • 500:$1.7693
  • 100:$2.0784
  • 10:$2.5370
  • 1:$2.8200
SIDR622DP-T1-GE3
DISTI # SIDR622DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 150V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.4922
  • 500:$1.7693
  • 100:$2.0784
  • 10:$2.5370
  • 1:$2.8200
SIDR622DP-T1-GE3
DISTI # 31607405		Vishay IntertechnologiesSIDR622DP-T1-GE35987
  • 3000:$1.3110
  • 1000:$1.6219
  • 500:$1.6390
  • 250:$1.8940
  • 100:$1.9130
  • 25:$2.4830
  • 10:$2.5080
  • 6:$3.3462
SIDR622DP-T1-GE3
DISTI # 59AC7337		Vishay IntertechnologiesN-CHANNEL 150-V (D-S) MOSFET0
  • 10000:$1.2400
  • 6000:$1.2900
  • 4000:$1.3300
  • 2000:$1.4800
  • 1000:$1.5600
  • 1:$1.6600
SIDR622DP-T1-GE3
DISTI # 78AC6502		Vishay IntertechnologiesMOSFET, N-CH, 150V, 56.7A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:56.7A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0147ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes0
  • 500:$1.7500
  • 250:$1.8700
  • 100:$2.0000
  • 50:$2.1900
  • 25:$2.3800
  • 10:$2.5800
  • 1:$3.1000
SIDR622DP-T1-GE3
DISTI # 78-SIDR622DP-T1-GE3		Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		2466
  • 1:$3.0700
  • 10:$2.5500
  • 100:$1.9800
  • 500:$1.7300
  • 1000:$1.4300
  • 3000:$1.3400
  • 6000:$1.2900
SIDR622DP-T1-GE3
DISTI # 2932897		Vishay IntertechnologiesMOSFET, N-CH, 150V, 56.7A, 150DEG C
RoHS: Compliant		0
  • 1000:$2.2700
  • 500:$2.4000
  • 250:$2.5500
  • 100:$2.7700
  • 10:$3.2000
  • 1:$3.6700
SIDR622DP-T1-GE3
DISTI # 2932897		Vishay IntertechnologiesMOSFET, N-CH, 150V, 56.7A, 150DEG C0
  • 500:£1.2600
  • 250:£1.3500
  • 100:£1.4400
  • 10:£1.8700
  • 1:£2.5400
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SIDR622DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,07 $
3,07 $
10
2,55 $
25,50 $
100
1,98 $
198,00 $
500
1,73 $
865,00 $
1000
1,43 $
1 430,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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