SI7113ADN-T1-GE3

SI7113ADN-T1-GE3
Mfr. #:
SI7113ADN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7113ADN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7113ADN-T1-GE3 DatasheetSI7113ADN-T1-GE3 Datasheet (P4-P6)SI7113ADN-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SI7113ADN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
10.8 A
Rds On - Drain-Source-Widerstand:
186 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
5.65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
27.8 W
Aufbau:
Single
Verpackung:
Spule
Serie:
Si7113ADN
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
8 S
Abfallzeit:
1622 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
35 ns
Tags
SI7113, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Power MOSFET P-Channel -100V VDS ±20V VGS -10.8A ID 8-Pin PowerPAK 1212 T/R
***ical
Trans MOSFET P-CH 100V 10.8A 8-Pin PowerPAK 1212 EP
***i-Key
MOSFET P-CH 100V 10.8A 1212-8
***ark
Mosfet, P-Ch, -100V, -10.8A, 150Deg C; Transistor Polarity:p Channel; Continuous Drain Current Id:-10.8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.6V; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -100V, -10.8A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.6V; Power Dissipation Pd:27.8W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE P, -100V, -10.8A, 150°C; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-10.8A; Tensione Drain Source Vds:-100V; Resistenza di Attivazione Rds(on):0.11ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.6V; Dissipazione di Potenza Pd:27.8W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI7113ADN-T1-GE3
DISTI # V99:2348_18978437
Vishay IntertechnologiesSI7113ADN-T1-GE31047
  • 24000:$0.1968
  • 9000:$0.2186
  • 6000:$0.2516
  • 3000:$0.2550
  • 1000:$0.2812
  • 500:$0.3797
  • 100:$0.4623
  • 10:$0.6813
  • 1:$0.8960
SI7113ADN-T1-GE3
DISTI # V36:1790_18978437
Vishay IntertechnologiesSI7113ADN-T1-GE30
    SI7113ADN-T1-GE3
    DISTI # SI7113ADN-T1-GE3CT-ND
    Vishay SiliconixMOSFET P-CH 100V 10.8A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    774In Stock
    • 1000:$0.2657
    • 500:$0.3438
    • 100:$0.4376
    • 10:$0.5860
    • 1:$0.6800
    SI7113ADN-T1-GE3
    DISTI # SI7113ADN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET P-CH 100V 10.8A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    774In Stock
    • 1000:$0.2657
    • 500:$0.3438
    • 100:$0.4376
    • 10:$0.5860
    • 1:$0.6800
    SI7113ADN-T1-GE3
    DISTI # SI7113ADN-T1-GE3TR-ND
    Vishay SiliconixMOSFET P-CH 100V 10.8A 1212-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 30000:$0.2023
    • 15000:$0.2048
    • 6000:$0.2200
    • 3000:$0.2352
    SI7113ADN-T1-GE3
    DISTI # 30151728
    Vishay IntertechnologiesSI7113ADN-T1-GE31047
    • 24000:$0.1968
    • 9000:$0.2186
    • 6000:$0.2516
    • 3000:$0.2550
    • 1000:$0.2812
    • 500:$0.3797
    • 100:$0.4623
    • 32:$0.6813
    SI7113ADN-T1-GE3
    DISTI # SI7113ADN-T1-GE3
    Vishay IntertechnologiesTrenchFET Power MOSFET P-Channel -100V VDS ±20V VGS -10.8A ID 8-Pin PowerPAK 1212 T/R (Alt: SI7113ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Tape and Reel
    Asia - 0
      SI7113ADN-T1-GE3
      DISTI # SI7113ADN-T1-GE3
      Vishay IntertechnologiesTrenchFET Power MOSFET P-Channel -100V VDS ±20V VGS -10.8A ID 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7113ADN-T1-GE3)
      RoHS: Compliant
      Min Qty: 6000
      Container: Reel
      Americas - 0
      • 60000:$0.1849
      • 30000:$0.1899
      • 18000:$0.1949
      • 12000:$0.2039
      • 6000:$0.2099
      SI7113ADN-T1-GE3
      DISTI # SI7113ADN-T1-GE3
      Vishay IntertechnologiesTrenchFET Power MOSFET P-Channel -100V VDS ±20V VGS -10.8A ID 8-Pin PowerPAK 1212 T/R (Alt: SI7113ADN-T1-GE3)
      RoHS: Compliant
      Min Qty: 1
      Container: Tape and Reel
      Europe - 0
      • 1000:€0.1979
      • 500:€0.2009
      • 100:€0.2049
      • 50:€0.2129
      • 25:€0.2299
      • 10:€0.2679
      • 1:€0.3919
      SI7113ADN-T1-GE3
      DISTI # 59AC7485
      Vishay IntertechnologiesP-CHANNEL 100-V (D-S) MOSFET0
      • 50000:$0.1870
      • 30000:$0.1950
      • 20000:$0.2100
      • 10000:$0.2240
      • 5000:$0.2430
      • 1:$0.2490
      SI7113ADN-T1-GE3
      DISTI # 78AC6540
      Vishay IntertechnologiesMOSFET, P-CH, -100V, -10.8A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-10.8A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.6V,RoHS Compliant: Yes219
      • 1000:$0.2480
      • 500:$0.3210
      • 250:$0.3570
      • 100:$0.3920
      • 50:$0.4370
      • 25:$0.4820
      • 10:$0.5270
      • 1:$0.6970
      SI7113ADN-T1-GE3
      DISTI # 78-SI7113ADN-T1-GE3
      Vishay IntertechnologiesMOSFET -100V Vds 20V Vgs PowerPAK 1212-8
      RoHS: Compliant
      0
      • 1:$0.6900
      • 10:$0.5220
      • 100:$0.3880
      • 500:$0.3180
      • 1000:$0.2460
      • 3000:$0.2240
      • 6000:$0.2100
      SI7113ADN-T1-GE3
      DISTI # 2932889
      Vishay IntertechnologiesMOSFET, P-CH, -100V, -10.8A, 150DEG C
      RoHS: Compliant
      219
      • 1000:$0.3230
      • 500:$0.3410
      • 250:$0.4010
      • 100:$0.4870
      • 10:$0.6210
      • 1:$0.7510
      SI7113ADN-T1-GE3
      DISTI # 2932889
      Vishay IntertechnologiesMOSFET, P-CH, -100V, -10.8A, 150DEG C219
      • 500:£0.2510
      • 250:£0.2790
      • 100:£0.3060
      • 25:£0.4320
      • 5:£0.4660
      Bild Teil # Beschreibung
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      Mfr.#: RC0402FR-0712K4L

      OMO.#: OMO-RC0402FR-0712K4L

      Thick Film Resistors - SMD 12.4K OHM 1%
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      Mfr.#: INA213CIDCKR

      OMO.#: OMO-INA213CIDCKR-TEXAS-INSTRUMENTS

      IC OP AMP CURR SENSE SC70-6
      ABM3B-25.000MHZ-10-1-U-T

      Mfr.#: ABM3B-25.000MHZ-10-1-U-T

      OMO.#: OMO-ABM3B-25-000MHZ-10-1-U-T-ABRACON

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      Mfr.#: TPS26601RHFT

      OMO.#: OMO-TPS26601RHFT-TEXAS-INSTRUMENTS

      IC PWR MGMT EFUSE 60V 24VQFN
      RC0402FR-07255RL

      Mfr.#: RC0402FR-07255RL

      OMO.#: OMO-RC0402FR-07255RL-YAGEO

      Thick Film Resistors - SMD 255 OHM 1%
      RC0402FR-0721K5L

      Mfr.#: RC0402FR-0721K5L

      OMO.#: OMO-RC0402FR-0721K5L-YAGEO

      Thick Film Resistors - SMD 21.5K OHM 1%
      RC0402FR-0712K4L

      Mfr.#: RC0402FR-0712K4L

      OMO.#: OMO-RC0402FR-0712K4L-YAGEO

      Thick Film Resistors - SMD 12.4K OHM 1%
      RC0402FR-076K04L

      Mfr.#: RC0402FR-076K04L

      OMO.#: OMO-RC0402FR-076K04L-YAGEO

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SI7113ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,68 $
      0,68 $
      10
      0,52 $
      5,21 $
      100
      0,39 $
      38,70 $
      500
      0,32 $
      158,50 $
      1000
      0,24 $
      245,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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