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NTMS4177PR2G

NTMS4177PR2G
Mfr. #:
NTMS4177PR2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET PFET SO8 30V 9.6A TR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMS4177PR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4177PR2G DatasheetNTMS4177PR2G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.6 A
Rds On - Drain-Source-Widerstand:
19 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
55 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
5 mm
Produkt:
MOSFET Kleinsignal
Serie:
NTMS4177P
Transistortyp:
1 P-Channel
Typ:
Leistungs-MOSFET
Breite:
4 mm
Marke:
ON Semiconductor
Vorwärtstranskonduktanz - Min:
30 S
Abfallzeit:
36 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.019048 oz
Tags
NTMS4177, NTMS417, NTMS41, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
NTMS4177PR2G P-channel MOSFET Transistor; 11.4 A; 30 V; 8-Pin SOIC
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30V 6.6A 12m¦¸@10V,11.4A 840mW 2.5V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
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Trans MOSFET P-CH 30V 8.9A 8-Pin SOIC N T/R
***nell
MOSFET, P CHANNEL, -30V, -11.4A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V
Teil # Mfg. Beschreibung Aktie Preis
NTMS4177PR2G
DISTI # NTMS4177PR2GTR-ND		ON SemiconductorMOSFET P-CH 30V 6.6A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.3030
NTMS4177PR2G
DISTI # NTMS4177PR2GCT-ND		ON SemiconductorMOSFET P-CH 30V 6.6A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3444
  • 500:$0.4305
  • 100:$0.5812
  • 10:$0.7530
  • 1:$0.8600
NTMS4177PR2G
DISTI # NTMS4177PR2GDKR-ND		ON SemiconductorMOSFET P-CH 30V 6.6A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3444
  • 500:$0.4305
  • 100:$0.5812
  • 10:$0.7530
  • 1:$0.8600
NTMS4177PR2G
DISTI # NTMS4177PR2G		ON SemiconductorTrans MOSFET P-CH 30V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS4177PR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2479
  • 5000:$0.2459
  • 10000:$0.2429
  • 15000:$0.2399
  • 25000:$0.2339
NTMS4177PR2G
DISTI # 81Y7052		ON SemiconductorMOSFET, P CHANNEL, -30V, -11.4A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):10mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,, RoHS Compliant: Yes0
  • 1:$0.7100
  • 10:$0.5890
  • 25:$0.5190
  • 50:$0.4500
  • 100:$0.3800
  • 250:$0.3550
  • 500:$0.3290
  • 1000:$0.3040
NTMS4177PR2G
DISTI # 95M7002		ON SemiconductorP CHANNEL MOSFET, -30V, 11.4A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):10mohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes0
  • 1:$0.2570
  • 2500:$0.2540
  • 5000:$0.2510
  • 10000:$0.2480
  • 15000:$0.2430
  • 25000:$0.2380
NTMS4177PR2G.
DISTI # 29AC9070		ON SemiconductorPFET SO8 30V 11.4A 19MO , ROHS COMPLIANT: YES0
  • 1:$0.2570
  • 2500:$0.2540
  • 5000:$0.2510
  • 10000:$0.2480
  • 15000:$0.2430
  • 25000:$0.2380
NTMS4177PR2G
DISTI # 70341381		ON SemiconductorNTMS4177PR2G P-channel MOSFET Transistor,11.4 A,30 V,8-Pin SOIC
RoHS: Compliant		0
  • 20:$0.7200
  • 50:$0.6900
  • 100:$0.6500
  • 200:$0.6200
NTMS4177PR2G
DISTI # 863-NTMS4177PR2G		ON SemiconductorMOSFET PFET SO8 30V 9.6A TR
RoHS: Compliant		5
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
  • 2500:$0.2570
  • 10000:$0.2480
  • 25000:$0.2380
NTMS4177PR2G
DISTI # 2533198		ON SemiconductorMOSFET, P CHANNEL, -30V, -11.4A, SOIC-8
RoHS: Compliant		0
  • 1:$1.1300
  • 10:$0.9330
  • 100:$0.6020
  • 1000:$0.4810
  • 2500:$0.4070
  • 10000:$0.3930
  • 25000:$0.3770
  • 50000:$0.3710
NTMS4177PR2G
DISTI # 2533198		ON SemiconductorMOSFET, P CHANNEL, -30V, -11.4A, SOIC-8
RoHS: Compliant		0
  • 5:£0.5130
  • 25:£0.4720
  • 100:£0.2930
  • 250:£0.2610
  • 500:£0.2300
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von NTMS4177PR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,78 $
0,78 $
10
0,65 $
6,49 $
100
0,42 $
41,90 $
1000
0,34 $
335,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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