NGTB50N60S1WG

NGTB50N60S1WG
Mfr. #:
NGTB50N60S1WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors FSII 50A 600V Welding
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB50N60S1WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB50N60S1WG DatasheetNGTB50N60S1WG Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
NGTB50N60S1WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
100 A
Pd - Verlustleistung:
417 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
50 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB50N60, NGTB50N6, NGTB5, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB50N60S1WG
DISTI # V99:2348_07285623
ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
26
  • 1000:$2.9790
  • 500:$3.5530
  • 250:$4.0030
  • 100:$4.2570
  • 10:$4.9640
  • 1:$6.4768
NGTB50N60S1WG
DISTI # NGTB50N60S1WGOS-ND
ON SemiconductorIGBT 50A 600V TO-247
RoHS: Compliant
Min Qty: 90
Container: Tube
Limited Supply - Call
  • 90:$5.2920
NGTB50N60S1WG
DISTI # 25862757
ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
26
  • 3:$6.4768
NGTB50N60S1WG
DISTI # NGTB50N60S1WG
ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Rail - Bulk (Alt: NGTB50N60S1WG)
Min Qty: 101
Container: Bulk
Americas - 0
  • 1010:$2.9900
  • 303:$3.0900
  • 505:$3.0900
  • 101:$3.1900
  • 202:$3.1900
NGTB50N60S1WG
DISTI # NGTB50N60S1WG
ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Rail (Alt: NGTB50N60S1WG)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.5900
  • 500:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.0900
  • 10:€3.2900
  • 1:€3.5900
NGTB50N60S1WG
DISTI # 863-NGTB50N60S1WG
ON SemiconductorIGBT Transistors FSII 50A 600V Welding
RoHS: Compliant
117
  • 1:$5.9300
  • 10:$5.0400
  • 100:$4.3600
  • 250:$4.1400
  • 500:$3.7100
  • 1000:$3.1300
  • 2500:$2.9800
NGTB50N60S1WGON SemiconductorInsulated Gate Bipolar Transistor
RoHS: Compliant
4920
  • 1000:$3.2800
  • 500:$3.4500
  • 100:$3.5900
  • 25:$3.7400
  • 1:$4.0300
NGTB50N60S1WG
DISTI # 8829828P
ON SemiconductorIGBT N-CH 600V 50A TO247, TU10
  • 100:£3.2750
  • 50:£3.6050
  • 20:£3.6900
  • 10:£3.7750
Bild Teil # Beschreibung
NGTB50N60FWG

Mfr.#: NGTB50N60FWG

OMO.#: OMO-NGTB50N60FWG

IGBT Transistors 600V/50A IGBT NPT TO-247
NGTB50N60FLWG

Mfr.#: NGTB50N60FLWG

OMO.#: OMO-NGTB50N60FLWG

IGBT Transistors 600V/50A IGBT LPT TO-24
NGTB50N60FL2WG

Mfr.#: NGTB50N60FL2WG

OMO.#: OMO-NGTB50N60FL2WG-ON-SEMICONDUCTOR

IGBT Transistors 600V/50A FAST IGBT FSII T
NGTB50N60FLWG

Mfr.#: NGTB50N60FLWG

OMO.#: OMO-NGTB50N60FLWG-ON-SEMICONDUCTOR

IGBT Transistors 600V/50A IGBT LPT TO-247
NGTB50N60FWG

Mfr.#: NGTB50N60FWG

OMO.#: OMO-NGTB50N60FWG-ON-SEMICONDUCTOR

IGBT Transistors 600V/50A IGBT NPT TO-247
NGTB50N120FL2WG 50N120FL2

Mfr.#: NGTB50N120FL2WG 50N120FL2

OMO.#: OMO-NGTB50N120FL2WG-50N120FL2-1190

Neu und Original
NGTB50N120FL2WG 50N120F

Mfr.#: NGTB50N120FL2WG 50N120F

OMO.#: OMO-NGTB50N120FL2WG-50N120F-1190

Neu und Original
NGTB50N60FW

Mfr.#: NGTB50N60FW

OMO.#: OMO-NGTB50N60FW-1190

Neu und Original
NGTB50N60S1WG

Mfr.#: NGTB50N60S1WG

OMO.#: OMO-NGTB50N60S1WG-ON-SEMICONDUCTOR

IGBT 50A 600V TO-247
NGTB50N65S1WG

Mfr.#: NGTB50N65S1WG

OMO.#: OMO-NGTB50N65S1WG-ON-SEMICONDUCTOR

IGBT TRENCH 650V 140A TO247
Verfügbarkeit
Aktie:
117
Auf Bestellung:
2100
Menge eingeben:
Der aktuelle Preis von NGTB50N60S1WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,93 $
5,93 $
10
5,04 $
50,40 $
100
4,36 $
436,00 $
250
4,14 $
1 035,00 $
500
3,71 $
1 855,00 $
1000
3,13 $
3 130,00 $
2500
2,98 $
7 450,00 $
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