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FGM622S

FGM622S
Mfr. #:
FGM622S
Hersteller:
Sanken
Beschreibung:
Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGM622S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Sanken
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Paket-Koffer
TO-3P-3 Full Pack
Eingabetyp
Standard
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
TO-3PF-3
Leistung max
60W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
25A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
75A
Vce-on-Max-Vge-Ic
1.9V @ 15V, 25A
Schaltenergie
-
Gate-Gebühr
40nC
Td-ein-aus-25°C
50ns/200ns
Testbedingung
-
Tags
FGM62, FGM6, FGM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
***i-Key
IGBT 600V 16A TO-3PF
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
***ure Electronics
N Channel 600 V 25 A Surface Mount Very Fast PowerMESH IGBT - TO-252
***ical
Trans IGBT Chip N-CH 600V 25A 70000mW 3-Pin(2+Tab) DPAK T/R
***nell
IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ark
N CHANNEL IGBT, PowerMESH, 600V, 25A, DPAK, FULL REEL; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:70W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) DPAK T/R / IGBT 600V 25A 80W DPAK
***ure Electronics
STGD14NC60K Series N-Channel 600 V 14 A Short Circuit PowerMESH IGBT - TO-252-3
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors N-channel MOSFET
***icroelectronics
New short circuit rugged "K" series
***ical
Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R
*** Electronics
ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 20A, TO-252-3
***nell
IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ineon SCT
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF
***ineon SCT
Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Teil # Mfg. Beschreibung Aktie Preis
FGM622S
DISTI # 30592756		Sanken Electric Co LtdTrans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
RoHS: Compliant		1080
  • 10:$2.4097
  • 7:$3.8760
FGM622S
DISTI # FGM622S-ND		Sanken Electric Co LtdIGBT 600V 16A TO-3PF
RoHS: Compliant
Min Qty: 1080
Container: Tube		Temporarily Out of Stock
  • 1080:$2.7783
FGM622S
DISTI # C1S721000047362		Sanken Electric Co LtdTrans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF1080
  • 10:$1.8900
  • 1:$3.0400
Bild Teil # Beschreibung
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 Circular Push Pull Connectors STRAIGHT PLUG FEMALE W. CABLE COLLET
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Mfr.#: FGMS12SR6020NA

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von FGM622S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,84 $
2,84 $
10
2,69 $
26,93 $
100
2,55 $
255,15 $
500
2,41 $
1 204,90 $
1000
2,27 $
2 268,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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