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SIHD4N80E-GE3

SIHD4N80E-GE3
Mfr. #:
SIHD4N80E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHD4N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD4N80E-GE3 DatasheetSIHD4N80E-GE3 Datasheet (P4-P6)SIHD4N80E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHD4N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
4.3 A
Rds On - Drain-Source-Widerstand:
1.1 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
16 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
69 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
1.5 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 4.3A 3-Pin TO-252
***nell
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W.
***ark
Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity:n Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHD4N80E-GE3
DISTI # SIHD4N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V FP TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		2870In Stock
  • 5000:$0.7781
  • 2500:$0.8080
  • 1000:$0.8678
  • 500:$1.0474
  • 100:$1.2748
  • 10:$1.5860
  • 1:$1.7700
SIHD4N80E-GE3
DISTI # SIHD4N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 4.3A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD4N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7269
  • 18000:$0.7479
  • 12000:$0.7689
  • 6000:$0.8009
  • 3000:$0.8259
SIHD4N80E-GE3
DISTI # 78AC6519		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes2990
  • 1000:$0.8310
  • 500:$1.0000
  • 100:$1.1400
  • 50:$1.2500
  • 25:$1.3600
  • 10:$1.4700
  • 1:$1.7800
SIHD4N80E-GE3
DISTI # 78-SIHD4N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		2842
  • 1:$1.7600
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9930
  • 1000:$0.8230
SIHD4N80E-GE3
DISTI # 2932924		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W2990
  • 500:£0.7190
  • 250:£0.7690
  • 100:£0.8190
  • 10:£1.1000
  • 1:£1.4500
SIHD4N80E-GE3
DISTI # 2932924		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
RoHS: Compliant		2990
  • 1000:$1.2800
  • 500:$1.3500
  • 250:$1.6000
  • 100:$1.9400
  • 10:$2.4700
  • 1:$2.9900
SIHD4N80E-GE3Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von SIHD4N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,76 $
    1,76 $
    10
    1,46 $
    14,60 $
    100
    1,13 $
    113,00 $
    500
    0,99 $
    496,50 $
    1000
    0,82 $
    823,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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