MRFE6S8046GNR1

MRFE6S8046GNR1
Mfr. #:
MRFE6S8046GNR1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV6E 45W GSM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRFE6S8046GNR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
E
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
66 V
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
TO-270-4
Verpackung:
Spule
Aufbau:
Single Dual Drain Dual Gate
Höhe:
2.64 mm
Länge:
17.58 mm
Typ:
HF-Leistungs-MOSFET
Breite:
9.07 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Gewichtseinheit:
0.057666 oz
Tags
MRFE6S, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET RF N-CH 45W TO-270-4
***hardson RFPD
RF POWER TRANSISTOR LDMOS
Teil # Mfg. Beschreibung Aktie Preis
MRFE6S8046GNR1
DISTI # MRFE6S8046GNR1-ND
NXP SemiconductorsFET RF 66V 894MHZ TO-270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Limited Supply - Call
    MRFE6S8046GNR1
    DISTI # 841-MRFE6S8046GNR1
    NXP SemiconductorsRF MOSFET Transistors HV6E 45W GSM
    RoHS: Compliant
    0
      MRFE6S8046GNR1
      DISTI # MRFE6S8046GNR1
      NXP SemiconductorsRF POWER TRANSISTOR
      RoHS: Compliant
      0
        Bild Teil # Beschreibung
        MRFE6S8046GNR1

        Mfr.#: MRFE6S8046GNR1

        OMO.#: OMO-MRFE6S8046GNR1

        RF MOSFET Transistors HV6E 45W GSM
        MRFE6S8046NR1

        Mfr.#: MRFE6S8046NR1

        OMO.#: OMO-MRFE6S8046NR1

        RF MOSFET Transistors HV6E 45W GSM
        MRFE6S8046GNR1

        Mfr.#: MRFE6S8046GNR1

        OMO.#: OMO-MRFE6S8046GNR1-NXP-SEMICONDUCTORS

        FET RF 66V 894MHZ TO-270-4
        MRFE6S8046NR1

        Mfr.#: MRFE6S8046NR1

        OMO.#: OMO-MRFE6S8046NR1-NXP-SEMICONDUCTORS

        FET RF 66V 894MHZ TO-270-4
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1500
        Menge eingeben:
        Der aktuelle Preis von MRFE6S8046GNR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Beginnen mit
        Neueste Produkte
        • PCF85263 CMOS Real-Time Clock
          NXP's tiny real-time clock/calendar is optimized for low power consumption and with automatic switching to battery on main power loss.
        • Compare MRFE6S8046GNR1
          MRFE6S19100H vs MRFE6S8046GNR1 vs MRFE6S8046NR1
        • NFC Contactless Readers
          NXP's NFC frontend with an advanced 32-bit microcontroller
        • Smart Charging Solutions
          NXP's smart charging solution consists of a primary side flyback QR controller, a secondary side SR controller, and a protocol controller.
        • FRDM-KL26Z
          FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
        • Single-Coil Wireless Reference Design
          Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
        Top