OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

RGS60TS65DHRC11

RGS60TS65DHRC11
Mfr. #:
RGS60TS65DHRC11
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors 650V 30A FIELD STOP TRENCH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGS60TS65DHRC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RGS60TS65DHRC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247N-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.65 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
56 A
Pd - Verlustleistung:
223 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
ROHM Halbleiter
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Teil # Aliase:
RGS60TS65DHR
Tags
RGS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 56A 223000mW Automotive 3-Pin(3+Tab) TO-247N Tube
***et
Field Stop Trench IGBT Transistor N-Channel 650V 30A 3-Pin TO-247N Tube
***i-Key
650V 30A FIELD STOP TRENCH IGBT.
***ronik
IGBT 650V 30A 1,65V TO-247 AECQ
***
650V 30A FIELD STOP TRENCH
***ark
Fieldstop Trench Igbt650V30Apd223Wto247N; Dc Collector Current:56A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. FIELDSTOP TRENCH IGBT650V30APD223WTO247N; DC Collector Current:56A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
FIELDSTOP TRENCH IGBT650V30APD223WTO247N; Corrente di Collettore CC:56A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:223W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247N; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Teil # Mfg. Beschreibung Aktie Preis
RGS60TS65DHRC11
DISTI # 846-RGS60TS65DHRC11-ND		ROHM Semiconductor650V 30A FIELD STOP TRENCH IGBT.
RoHS: Not compliant
Min Qty: 1
Container: Tube		On Order
  • 2520:$3.3600
  • 510:$3.9840
  • 120:$4.6800
  • 30:$5.4000
  • 10:$5.7120
  • 1:$6.3600
RGS60TS65DHRC11
DISTI # 755-RGS60TS65DHRC11		ROHM SemiconductorIGBT Transistors 650V 30A FIELD STOP TRENCH
RoHS: Compliant		0
  • 1:$6.3500
  • 10:$5.3900
  • 100:$4.6800
  • 250:$4.4400
RGS60TS65DHRC11
DISTI # IGBT2246		ROHM SemiconductorIGBT 650V 30A 1,65V TO-247 AECQ
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$4.2100
  • 900:$3.8900
  • 1350:$3.6000
RGS60TS65DHRC11
DISTI # 2766350		ROHM SemiconductorFIELDSTOP TRENCH IGBT650V30APD223WTO247N
RoHS: Compliant		0
  • 1000:$5.0000
  • 500:$5.0600
  • 250:$5.3400
  • 100:$5.6400
  • 10:$6.3700
  • 1:$6.8200
RGS60TS65DHRC11
DISTI # 2766350		ROHM SemiconductorFIELDSTOP TRENCH IGBT650V30APD223WTO247N0
  • 500:£2.7300
  • 250:£3.0100
  • 100:£3.1600
  • 10:£3.6200
  • 1:£4.7500
RGS60TS65DHRC11ROHM SemiconductorIGBT Transistors 650V 30A FIELD STOP TRENCH
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    RGS60TS65DHRC11

    Mfr.#: RGS60TS65DHRC11

    OMO.#: OMO-RGS60TS65DHRC11

    		 IGBT Transistors 650V 30A FIELD STOP TRENCH
    RGS60TS65HRC11

    Mfr.#: RGS60TS65HRC11

    OMO.#: OMO-RGS60TS65HRC11

    		 IGBT Transistors 650V 30A FIELD STOP TRENCH
    RGS60TS65DHRC11

    Mfr.#: RGS60TS65DHRC11

    OMO.#: OMO-RGS60TS65DHRC11-1190

    		 650V 30A FIELD STOP TRENCH IGBT.
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von RGS60TS65DHRC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,35 $
    6,35 $
    10
    5,39 $
    53,90 $
    100
    4,68 $
    468,00 $
    250
    4,44 $
    1 110,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top