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PHP54N06T,127

PHP54N06T,127
Mfr. #:
PHP54N06T,127
Hersteller:
NXP Semiconductors
Beschreibung:
MOSFET N-CH 55V 54A TO220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PHP54N06T,127 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PHP54N06T,127 Mehr Informationen PHP54N06T,127 Product Details
Produkteigenschaft
Attributwert
Tags
PHP54N0, PHP54, PHP5, PHP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Rail
***ponent Stockers USA
54 A 55 V 0.02 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***peria
PHP54N06T - N-channel TrenchMOS standard level FET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
***eco
Transistor MOSFET N Channel 55 Volt 64 Amp 3 Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 53A/55V TO220 IRFZ 48 N PBF
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Power Dissipation Ptot Max:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg
***fin
Transistor NPN Field Effect IRFZ44/IRFZ44N INTERNATIONAL RECTIFIER Ampere=46 V=250 TO220
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 41A/55V TO220 IRFZ 44 NPBF
***p One Stop
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W
*** Stop Electro
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:49A; On Resistance, Rds(on):17.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Current Temperature:25°C; Device Marking:IRFZ44NPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
***ure Electronics
Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
***eco
Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF
***Yang
Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***sible Micro
RoHS|YES|MEDIX|44222|TRANS MOSFET N-CH 55V 53A 3-PI|N(3+TAB) TO-220AB|
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
***i-Key
MOSFET N-CH 60V 59A TO-220AB
***ser
MOSFETs 55a, 60V, 0.019Ohm Logic Level N-Ch
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 60V 55A TO-220
***el Electronic
IC SUPERVISOR 1 CHANNEL 5VSOF
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 60V 52A 3-Pin(3+Tab) TO-220AB Rail
***ponent Stockers USA
52 A 60 V 0.022 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***peria
PHP52N06T - N-channel TrenchMOS standard level FET
Teil # Mfg. Beschreibung Aktie Preis
PHP54N06T,127
DISTI # PHP54N06T,127-ND		NXP SemiconductorsMOSFET N-CH 55V 54A TO220AB
RoHS: Compliant
Min Qty: 5000
Container: Tube		Limited Supply - Call
    PHP54N06T
    DISTI # 771-PHP54N06T    		NXP SemiconductorsMOSFET RAIL PWR-MOS
    RoHS: Compliant    		0
      PHP54N06T,127
      DISTI # N/A      		NXP SemiconductorsMOSFET RAIL PWR-MOS0
        Bild Teil # Beschreibung
        PHP54N06

        Mfr.#: PHP54N06

        OMO.#: OMO-PHP54N06-1190

        		 Neu und Original
        PHP54N06T

        Mfr.#: PHP54N06T

        OMO.#: OMO-PHP54N06T-1190

        		 MOSFET RAIL PWR-MOS
        PHP54N06T,127

        Mfr.#: PHP54N06T,127

        OMO.#: OMO-PHP54N06T-127-NXP-SEMICONDUCTORS

        		 MOSFET N-CH 55V 54A TO220AB
        PHP54NF06T

        Mfr.#: PHP54NF06T

        OMO.#: OMO-PHP54NF06T-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von PHP54N06T,127 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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