SIA921EDJ-T1-GE3

SIA921EDJ-T1-GE3
Mfr. #:
SIA921EDJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA921EDJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA921EDJ-T1-GE3 DatasheetSIA921EDJ-T1-GE3 Datasheet (P4-P6)SIA921EDJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIA921EDJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SC70-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
4.5 A
Rds On - Drain-Source-Widerstand:
48 mOhms, 48 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
23 nC, 23 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
7.8 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2.05 mm
Serie:
SIA
Transistortyp:
2 P-Channel
Breite:
2.05 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
11 S, 11 S
Abfallzeit:
10 ns, 10 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns, 20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns, 25 ns
Typische Einschaltverzögerungszeit:
20 ns, 20 ns
Teil # Aliase:
SIA921EDJ-GE3
Gewichtseinheit:
0.000988 oz
Tags
SIA921EDJ-T, SIA921, SIA92, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***s
    T***s
    NL

    Product not arrived yet, after almost 90 days

    2019-04-03
    D***a
    D***a
    CZ

    OK

    2019-07-01
    D***y
    D***y
    BY

    Product as described, good shipping time and nice price, thanks.

    2019-06-26
***ied Electronics & Automation
SIA921EDJ-T1-GE3 Dual P-channel MOSFET Transistor; 4.5 A; 20 V; 6-Pin SC-70
*** Source Electronics
MOSFET 2P-CH 20V 4.5A SC70-6 / Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(On):0.059Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V Rohs Compliant: No
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SIA921EDJ-T1-GE3
DISTI # V72:2272_09216858
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
1
  • 1:$0.8209
SIA921EDJ-T1-GE3
DISTI # V36:1790_09216858
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
0
  • 3000000:$0.2618
  • 1500000:$0.2620
  • 300000:$0.2730
  • 30000:$0.2897
  • 3000:$0.2923
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3CT-ND
Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
13770In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
13770In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3TR-ND
Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SIA921EDJ-T1-GE3
DISTI # 33258890
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
3000
  • 3000:$0.2302
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA921EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2051
  • 18000:$0.2108
  • 12000:$0.2168
  • 6000:$0.2260
  • 3000:$0.2329
SIA921EDJ-T1-GE3
DISTI # SIA921EDJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA921EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2359
  • 18000:€0.2539
  • 12000:€0.2749
  • 6000:€0.3189
  • 3000:€0.4679
SIA921EDJ-T1-GE3
DISTI # 15R4844
Vishay IntertechnologiesMOSFET Transistor Array, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SIA921EDJ-T1-GE3
DISTI # 63R6002
Vishay IntertechnologiesMOSFET Transistor Array,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
  • 500:$0.3230
  • 250:$0.3580
  • 100:$0.3920
  • 50:$0.4540
  • 25:$0.5160
  • 1:$0.6360
SIA921EDJ-T1-GE3.
DISTI # 15AC4248
Vishay IntertechnologiesTransistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:7.8W RoHS Compliant: No0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SIA921EDJ-T1-GE3
DISTI # 70616553
Vishay SiliconixSIA921EDJ-T1-GE3 Dual P-channel MOSFET Transistor,4.5 A,20 V,6-Pin SC-70
RoHS: Compliant
0
  • 300:$0.4060
  • 600:$0.3640
  • 1500:$0.3230
  • 3000:$0.2810
SIA921EDJ-T1-GE3
DISTI # 781-SIA921EDJ-GE3
Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
RoHS: Compliant
3398
  • 1:$0.6300
  • 10:$0.5100
  • 100:$0.3870
  • 500:$0.3200
  • 1000:$0.2560
  • 3000:$0.2310
  • 6000:$0.2160
  • 9000:$0.2080
  • 24000:$0.2000
SIA921EDJ-T1-GE3Vishay Siliconix 1000
    SIA921EDJ-T1-GE3
    DISTI # 8141235P
    Vishay IntertechnologiesTRANS MOSFET P-CH 20V 4.5A, RL400
    • 1000:£0.2230
    • 400:£0.2520
    • 100:£0.2860
    SIA921EDJT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    3000
      SIA921EDJ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
      RoHS: Compliant
      Americas -
        Bild Teil # Beschreibung
        25LC512T-I/SN

        Mfr.#: 25LC512T-I/SN

        OMO.#: OMO-25LC512T-I-SN

        EEPROM 512k 64KX8 2.5V SER EE IND
        PESD5V0S1BA,115

        Mfr.#: PESD5V0S1BA,115

        OMO.#: OMO-PESD5V0S1BA-115

        TVS Diodes / ESD Suppressors 5V BIDIRECTION ESD
        DMN5L06K-7

        Mfr.#: DMN5L06K-7

        OMO.#: OMO-DMN5L06K-7

        MOSFET N-Channel
        B340A-13-F

        Mfr.#: B340A-13-F

        OMO.#: OMO-B340A-13-F

        Schottky Diodes & Rectifiers 40V 3A
        DFLS130L-7

        Mfr.#: DFLS130L-7

        OMO.#: OMO-DFLS130L-7

        Schottky Diodes & Rectifiers 1A 30V
        BAT54HT1G

        Mfr.#: BAT54HT1G

        OMO.#: OMO-BAT54HT1G

        Schottky Diodes & Rectifiers 30V 200mW Single
        2305018-2

        Mfr.#: 2305018-2

        OMO.#: OMO-2305018-2

        USB Connectors USB TYPE C, REC IPX8 ON BOARD DUAL SMT
        AAA3528LSEEZGKQBKS

        Mfr.#: AAA3528LSEEZGKQBKS

        OMO.#: OMO-AAA3528LSEEZGKQBKS

        Standard LEDs - SMD 3.5x2.8MM LOW CU RGB SMD
        GRM033R61A105ME15D

        Mfr.#: GRM033R61A105ME15D

        OMO.#: OMO-GRM033R61A105ME15D-MURATA-ELECTRONICS

        Cap Ceramic 1uF 10V X5R 20% Pad SMD 0201 85C T/R
        52559-0853

        Mfr.#: 52559-0853

        OMO.#: OMO-52559-0853-687

        FFC & FPC Connectors VERT SMT ZIF 8P GOLD
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1989
        Menge eingeben:
        Der aktuelle Preis von SIA921EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,63 $
        0,63 $
        10
        0,51 $
        5,10 $
        100
        0,39 $
        38,70 $
        500
        0,32 $
        160,00 $
        1000
        0,26 $
        256,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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