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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
FQB7N20LTM DISTI # FQB7N20LTM-ND | ON Semiconductor | MOSFET N-CH 200V 6.5A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
FQB7N20LTM DISTI # 512-FQB7N20LTM | ON Semiconductor | MOSFET 200V N-Ch QFET Logic Level RoHS: Compliant | 0 |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: FQB7N65CTM OMO.#: OMO-FQB7N65CTM |
MOSFET 650V 7A NCH MOSFET | |
Mfr.#: FQB7N10LT1 OMO.#: OMO-FQB7N10LT1-1190 |
Neu und Original | |
Mfr.#: FQB7N30 OMO.#: OMO-FQB7N30-1190 |
Neu und Original | |
Mfr.#: FQB7N60M OMO.#: OMO-FQB7N60M-1190 |
Neu und Original | |
Mfr.#: FQB7N60TM-WS |
MOSFET N-CH 600V 7.4A D2PAK | |
Mfr.#: FQB7N65 OMO.#: OMO-FQB7N65-1190 |
Neu und Original | |
Mfr.#: FQB7N65CTM |
MOSFET N-CH 650V 7A D2PAK | |
Mfr.#: FQB7N80 OMO.#: OMO-FQB7N80-1190 |
Neu und Original | |
Mfr.#: FQB7N80TM OMO.#: OMO-FQB7N80TM-1190 |
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: FQB7N20TM |
MOSFET N-CH 200V 6.6A D2PAK |