IRFHM8235TRPBF

Mfr. #:: IRFHM8235TRPBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFHM8235TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IRFHM8235TRPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PQFN-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 25 V

Id - Kontinuierlicher Drainstrom:: 16 A

Rds On - Drain-Source-Widerstand:: 10.3 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.8 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 7.7 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3 W

Aufbau:: Single

Handelsname:: SmallPowIR

Verpackung:: Spule

Höhe:: 0.9 mm

Länge:: 3.3 mm

Serie:: IRFHM8235

Transistortyp:: 1 N-Channel

Breite:: 3.3 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 43 S

Abfallzeit:: 5.2 ns

Produktart:: MOSFET

Anstiegszeit:: 16 ns

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 7.5 ns

Typische Einschaltverzögerungszeit:: 7.9 ns

Teil # Aliase:: SP001556558

Tags: IRFHM82, IRFHM8, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFHM8235TRPBF Beschreibung

***ure Electronics: Single N-Channel 25 V 13.4 mOhm 12 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ark: TAPE AND REEL / MOSFET, 25V,A, 7.4mOhm, 7.3nC, PQFN3.3x3.3 single

***p One Stop: Trans MOSFET N-CH 25V 16A 8-Pin QFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.1C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET

***ure Electronics: Single N-Channel 25 V 5.2 mOhm 18 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ark: TAPE AND REEL / MOSFET, 25V,A, 5mOhm, 12nC, PQFN3.3x3.3 single

***p One Stop: Trans MOSFET N-CH 25V 19A 8-Pin QFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET

***ark: MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren

***emi: N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ

***r Electronics: Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***nell: MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ure Electronics: Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***p One Stop: Trans MOSFET N-CH 30V 13A 8-Pin PQFN EP T/R

***ment14 APAC: MOSFET, N CHANNEL, 25V, 30A, PQFN-8; TRA; MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.5C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ure Electronics: Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ical: Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***hard Electronics: FAIRCHILD SEMICONDUCTOR FDMC7672S MOSFET Transistor, N Channel, 18 A, 30 V, 0.005 ohm, 10 V, 1.6 V

***nell: MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This FDMC7672S is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.

***ure Electronics: N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ

***Yang: Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel

***ment14 APAC: N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

IRFHM8235TRPBF Mehr Informationen

Small PowIR MOSFETs: Infineon Small PowIR MOSFETs combine high performance silicon technology with small and innovative packaging to offer designers more flexibility when it comes to making a MOSFET selection. The IRLML6244TRPBF provides 21 mO max @ 4.5Vgs RDS(on). The new 2x2 PQFN package offers some of the smallest dual configurations possible (dual N or dual P) while providing 19°C/W optimal thermal performance. Infineon Small PowIR MOSFETs are available in SO-8, TSOP-6 and PQFN 3x3 packages allowing designers to maximize board space, save on part count and improve system efficiency.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFHM8235TRPBF DISTI # V72:2272_13891072	Infineon Technologies AG	Trans MOSFET N-CH 25V 16A 8-Pin PQFN EP T/R RoHS: Compliant	1575	1000:$0.2436 500:$0.3063 250:$0.3071 100:$0.3079 25:$0.4235 10:$0.4306 1:$0.4954
IRFHM8235TRPBF DISTI # IRFHM8235TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 16A 8PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3991In Stock	1000:$0.3515 500:$0.4308 100:$0.5695 10:$0.7280 1:$0.8200
IRFHM8235TRPBF DISTI # IRFHM8235TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 16A 8PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3991In Stock	1000:$0.3515 500:$0.4308 100:$0.5695 10:$0.7280 1:$0.8200
IRFHM8235TRPBF DISTI # IRFHM8235TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 16A 8PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3124
IRFHM8235TRPBF DISTI # 26196360	Infineon Technologies AG	Trans MOSFET N-CH 25V 16A 8-Pin PQFN EP T/R RoHS: Compliant	1575	1000:$0.2436 500:$0.3063 250:$0.3071 100:$0.3079 33:$0.4235
IRFHM8235TRPBF DISTI # IRFHM8235TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 25V 16A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8235TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2009 8000:$0.1939 16000:$0.1869 24000:$0.1809 40000:$0.1769
IRFHM8235TRPBF DISTI # 942-IRFHM8235TRPBF	Infineon Technologies AG	MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET RoHS: Compliant	2953	1:$0.6600 10:$0.5430 100:$0.3500 1000:$0.2800 4000:$0.2370 8000:$0.2280 24000:$0.2190
IRFHM8235TRPBF	International Rectifier	RoHS: Compliant	Europe - 4000
IRFHM8235TRPBF DISTI # C1S322000490798	Infineon Technologies AG	Trans MOSFET N-CH 25V 16A 8-Pin PQFN EP T/R RoHS: Compliant	1575	250:$0.3071 100:$0.3079 10:$0.4306

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	Mfr.#: RT0402BRD0710KL OMO.#: OMO-RT0402BRD0710KL	Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
	Mfr.#: MIC5203-5.0YM5-TR OMO.#: OMO-MIC5203-5-0YM5-TR-MICROCHIP-TECHNOLOGY	LDO Voltage Regulators
	Mfr.#: RT0402BRD0710KL OMO.#: OMO-RT0402BRD0710KL-YAGEO	Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
	Mfr.#: PCA9306DCTR OMO.#: OMO-PCA9306DCTR-TEXAS-INSTRUMENTS	Translation - Voltage Levels Dual BiDir I2C-Bus & SMBus Vltg Lvl-Trans
	Mfr.#: RC0402JR-074K7L OMO.#: OMO-RC0402JR-074K7L-YAGEO	Thick Film Resistors - SMD 4.7K OHM 5%

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von IRFHM8235TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,65 $~~; ~~0,65 $~~

10: ~~0,54 $~~; ~~5,43 $~~

100: ~~0,35 $~~; ~~35,00 $~~

1000: ~~0,28 $~~; ~~280,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRFHM8235TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes