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SI7434DP-T1-GE3

SI7434DP-T1-GE3
Mfr. #:
SI7434DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7434DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI7434DP-GE3
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR SO-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR SO-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.9W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
250V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
2.3A (Ta)
Rds-On-Max-Id-Vgs
155 mOhm @ 3.8A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Lade-Qg-Vgs
50nC @ 10V
Pd-Verlustleistung
1.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
23 ns
Anstiegszeit
23 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
2.3 A
Vds-Drain-Source-Breakdown-Voltage
250 V
Rds-On-Drain-Source-Widerstand
155 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
47 ns
Typische-Einschaltverzögerungszeit
16 ns
Kanal-Modus
Erweiterung
Tags
SI7434, SI743, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
***ark
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:6V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,250V,3.8A,SO8 PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.129ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.8A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SI7434DP-T1-GE3
DISTI # V72:2272_09216354		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3099
  • 3000:$1.4910
  • 1000:$1.5220
  • 500:$1.6900
  • 250:$1.8150
  • 100:$1.9320
  • 25:$2.1629
  • 10:$2.1750
  • 1:$2.4129
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7731In Stock
  • 1000:$1.5296
  • 500:$1.8461
  • 100:$2.3736
  • 10:$2.9540
  • 1:$3.2700
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7731In Stock
  • 1000:$1.5296
  • 500:$1.8461
  • 100:$2.3736
  • 10:$2.9540
  • 1:$3.2700
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$1.3827
SI7434DP-T1-GE3
DISTI # 25790042		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3099
  • 3000:$1.4900
  • 1000:$1.5209
  • 500:$1.6870
  • 250:$1.8120
  • 100:$1.9270
  • 25:$2.1570
  • 10:$2.1680
  • 5:$2.4040
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7434DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
  • 30000:$1.2900
SI7434DP-T1-GE3
DISTI # 26R1922		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 26R1922)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.7900
SI7434DP-T1-GE3
DISTI # 15R5190		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,No. of Pins:8,On Resistance Rds(on):162mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes0
  • 1:$1.9500
  • 2000:$1.8600
  • 4000:$1.7400
  • 8000:$1.6200
  • 12000:$1.5500
  • 20000:$1.5300
SI7434DP-T1-GE3
DISTI # 26R1922		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:4V RoHS Compliant: Yes20
  • 1:$3.5800
  • 25:$2.9600
  • 50:$2.7100
  • 100:$2.4500
  • 250:$2.3600
  • 500:$2.1200
  • 1000:$1.7900
SI7434DP-T1-GE3
DISTI # 781-SI7434DP-T1-GE3		Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		1700
  • 1:$2.9800
  • 10:$2.4700
  • 100:$2.0400
  • 250:$1.9700
  • 500:$1.7700
  • 1000:$1.4900
  • 3000:$1.4200
SI7434DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 3000
    SI7434DP-T1-GE3Vishay Intertechnologies 2333
      SI7434DP-T1-GE3Vishay Intertechnologies 273
        SI7434DP-T1-GE3
        DISTI # C1S803604026283        		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
        RoHS: Compliant        		3099
        • 250:$1.8120
        • 100:$1.9270
        • 25:$2.1570
        • 10:$2.1680
        • 1:$2.4040
        SI7434DP-T1-GE3
        DISTI # 2132253        		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC
        RoHS: Compliant        		20
        • 1:£3.1500
        • 25:£2.6000
        • 50:£2.3900
        • 100:£2.1500
        • 250:£2.0700
        SI7434DP-T1-GE3Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs PowerPAK SO-8Americas -
          SI7434DP-T1-GE3
          DISTI # 2132253          		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC
          RoHS: Compliant          		20
          • 3000:$4.2400
          • 6000:$3.7000
          Bild Teil # Beschreibung
          SI7434DP-T1-E3

          Mfr.#: SI7434DP-T1-E3

          OMO.#: OMO-SI7434DP-T1-E3

          		 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
          SI7434DP-T1-GE3

          Mfr.#: SI7434DP-T1-GE3

          OMO.#: OMO-SI7434DP-T1-GE3

          		 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
          SI7434DP-T1-GE3

          Mfr.#: SI7434DP-T1-GE3

          OMO.#: OMO-SI7434DP-T1-GE3-VISHAY

          		 IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
          SI7434DP-T1-E3

          Mfr.#: SI7434DP-T1-E3

          OMO.#: OMO-SI7434DP-T1-E3-VISHAY

          		 MOSFET N-CH 250V 2.3A PPAK SO-8
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von SI7434DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,94 $
          1,94 $
          10
          1,84 $
          18,38 $
          100
          1,74 $
          174,15 $
          500
          1,64 $
          822,40 $
          1000
          1,55 $
          1 548,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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