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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI4874BDY-T1-E3 DISTI # V72:2272_09216616 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 899 |
|
| SI4874BDY-T1-E3 DISTI # V36:1790_09216616 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4874BDY-T1-E3 DISTI # SI4874BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 12A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4042In Stock |
|
| SI4874BDY-T1-E3 DISTI # SI4874BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 12A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4042In Stock |
|
| SI4874BDY-T1-E3 DISTI # SI4874BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 12A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4874BDY-T1-E3 DISTI # 32443243 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 7500 |
|
| SI4874BDY-T1-E3 DISTI # 29000009 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 899 |
|
| SI4874BDY-T1-E3 DISTI # SI4874BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4874BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4874BDY-T1-E3 DISTI # 51K6967 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 51K6967) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SI4874BDY-T1-E3 DISTI # 51K6967 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 16A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes | 0 |
|
| SI4874BDY-T1-E3. DISTI # 30AC0173 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.6W,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI4874BDY-T1-E3 DISTI # 70026229 | Vishay Siliconix | MOSFET N-CH 30V 12A 8-SOIC RoHS: Compliant | 0 |
|
| SI4874BDY-T1-E3 DISTI # 781-SI4874BDY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 16A 0.007Ohm RoHS: Compliant | 1989 |
|
| SI4874BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2355 | |
| SI4874BDY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 16A 0.007Ohm | Americas - |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI4874BDY-T1-E3 OMO.#: OMO-SI4874BDY-T1-E3 |
MOSFET 30V 16A 0.007Ohm |
|
|
Mfr.#: SI4874BDY-T1-GE3 OMO.#: OMO-SI4874BDY-T1-GE3 |
MOSFET 30V 16A 3.0W 7.0mohm @ 10V |
|
Mfr.#: SI4874BDY-T1-GE3 OMO.#: OMO-SI4874BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 16A 3.0W 7.0mohm @ 10V |
|
Mfr.#: SI4874BDY-T1-E3-CUT TAPE |
Neu und Original |
|
|
Mfr.#: SI4874BDY-T1-E3 OMO.#: OMO-SI4874BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 12A 8-SOIC |