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IRF6619TRPBF

IRF6619TRPBF
Mfr. #:
IRF6619TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6619TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6619TRPBF DatasheetIRF6619TRPBF Datasheet (P4-P6)IRF6619TRPBF Datasheet (P7-P9)IRF6619TRPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MX
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
2.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
38 nC
Pd - Verlustleistung:
89 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon / IR
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001530090
Tags
IRF6619T, IRF6619, IRF661, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
A 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGERATED AT 150
***ure Electronics
Single N-Channel 20 V 3 mOhm 57 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Teil # Mfg. Beschreibung Aktie Preis
IRF6619TRPBF
DISTI # IRF6619TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 20V 30A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6619TRPBF
    DISTI # IRF6619TRPBFCT-ND    		Infineon Technologies AGMOSFET N-CH 20V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6619TRPBF
      DISTI # IRF6619TRPBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 20V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6619TRPBF
        DISTI # 70019564        		Infineon Technologies AGA 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGERATED AT 150
        RoHS: Compliant        		0
        • 4800:$1.5560
        • 9600:$1.5250
        • 24000:$1.4780
        IRF6619TRPBF
        DISTI # 942-IRF6619TRPBF        		Infineon Technologies AGMOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS
        RoHS: Compliant        		0
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1500
          Menge eingeben:
          Der aktuelle Preis von IRF6619TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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